RFP2N20
Description: Power Field-Effect Transistor, 2A I(D), 200V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Overview of RFP2N20 by Fairchild Semiconductor Corporation

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Part Data Attributes for RFP2N20 by Fairchild Semiconductor Corporation

RFP2N20
Fairchild Semiconductor Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
2 A
Drain-source On Resistance-Max
3.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
25 W
Pulsed Drain Current-Max (IDM)
5 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. RFP2N20
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 2A I(D), 200V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
    VS

Alternate Parts for RFP2N20

This table gives cross-reference parts and alternative options found for RFP2N20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP2N20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RFP2N20 2A, 200V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP2N20 vs RFP2N20
RFP2N20 2A, 200V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP2N20 vs RFP2N20
Part Number Description Manufacturer Compare
RFP8P06LE Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP2N20 vs RFP8P06LE
RFP12N10L 12A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP2N20 vs RFP12N10L
RFP2N20 2A, 200V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP2N20 vs RFP2N20
RFP40N10LE 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP2N20 vs RFP40N10LE
RFP12P08 Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP2N20 vs RFP12P08
STP3NA60FI 2.1A, 600V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT220, 3 PIN STMicroelectronics RFP2N20 vs STP3NA60FI
RFP8P06LE 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP2N20 vs RFP8P06LE
RFP8P06LE 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP2N20 vs RFP8P06LE
SPP30N03 Power Field-Effect Transistor, 30A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-220, 3 PIN Infineon Technologies AG RFP2N20 vs SPP30N03
SSP4N55 Power Field-Effect Transistor, 4A I(D), 550V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor RFP2N20 vs SSP4N55

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