Datasheets
IRF742 by:

8A, 400V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for IRF742 by Rochester Electronics LLC

Overview of IRF742 by Rochester Electronics LLC

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Part Details for IRF742

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IRF742 Part Data Attributes:

IRF742 Rochester Electronics LLC
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IRF742 Rochester Electronics LLC 8A, 400V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 33 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF742

This table gives cross-reference parts and alternative options found for IRF742. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF742, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF740-010 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF742 vs IRF740-010
IRF740 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF742 vs IRF740
IRF741 Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF742 vs IRF741
IRF741 10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF742 vs IRF741
IRF740LCPBF Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF742 vs IRF740LCPBF
IRF740PBF Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF742 vs IRF740PBF
IRF740-006 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF742 vs IRF740-006
MTP10N40E 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF742 vs MTP10N40E
IRF740 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF742 vs IRF740
IRF740 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF742 vs IRF740
Part Number Description Manufacturer Compare
IRF742 Power Field-Effect Transistor, 8A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF742 vs IRF742
IRF743 8.3A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF742 vs IRF743
IRF743 Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF742 vs IRF743
IRF741 Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF742 vs IRF741
MTP10N25 Power Field-Effect Transistor, 10A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF742 vs MTP10N25
IRF742 Power Field-Effect Transistor, 8.3A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF742 vs IRF742
BUZ61A Power Field-Effect Transistor, 11A I(D), 400V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IRF742 vs BUZ61A
MTP10N40E 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB onsemi IRF742 vs MTP10N40E
IRF740-006 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF742 vs IRF740-006
MTP10N35 10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF742 vs MTP10N35

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