Datasheets
RFP2N12L by:

2A, 120V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for RFP2N12L by Intersil Corporation

Overview of RFP2N12L by Intersil Corporation

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Part Details for RFP2N12L

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RFP2N12L Part Data Attributes:

RFP2N12L Intersil Corporation
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RFP2N12L Intersil Corporation 2A, 120V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 120 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 1.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 5 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFP2N12L

This table gives cross-reference parts and alternative options found for RFP2N12L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP2N12L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFP2N12L 2A, 120V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP2N12L vs RFP2N12L
RFP2N12L Power Field-Effect Transistor, 2A I(D), 120V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP2N12L vs RFP2N12L
Part Number Description Manufacturer Compare
RFP8P05 Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation RFP2N12L vs RFP8P05
RFP15N08L Power Field-Effect Transistor, 15A I(D), 80V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP2N12L vs RFP15N08L
RFG50N06LE Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor RFP2N12L vs RFG50N06LE
RFP14N06L Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP2N12L vs RFP14N06L
STP3NA60FI 2.1A, 600V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT220, 3 PIN STMicroelectronics RFP2N12L vs STP3NA60FI
RFP50N06LE Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP2N12L vs RFP50N06LE
RFP14N06L Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP2N12L vs RFP14N06L
RFP15P05 Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP2N12L vs RFP15P05
RFP15P06 Power Field-Effect Transistor, 15A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP2N12L vs RFP15P06
RFP70N06 N-Channel Power MOSFET 60V, 70A, 14mΩ, 800-TUBE onsemi RFP2N12L vs RFP70N06

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