Part Details for RFL1N10 by Harris Semiconductor
Overview of RFL1N10 by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for RFL1N10
RFL1N10 CAD Models
RFL1N10 Part Data Attributes
|
|
RFL1N10
Harris Semiconductor
Buy Now
Datasheet
|
Compare Parts:
RFL1N10
Harris Semiconductor
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 8.33 W | |
| Power Dissipation-Max (Abs) | 8.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RFL1N10
This table gives cross-reference parts and alternative options found for RFL1N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFL1N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| ND2410L-1 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 0.18A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA | RFL1N10 vs ND2410L-1 |
| 2N7007P018 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.065A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | RFL1N10 vs 2N7007P018 |
| 2N7002 | TDK Micronas GmbH | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | RFL1N10 vs 2N7002 |
| TP0606N6 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | RFL1N10 vs TP0606N6 |
| BSN205 | NXP Semiconductors | Check for Price | TRANSISTOR 300 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SC-43, 3 PIN, FET General Purpose Small Signal | RFL1N10 vs BSN205 |
| 2N7008P014 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | RFL1N10 vs 2N7008P014 |
| 2N6659 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | RFL1N10 vs 2N6659 |
| ZVN4306ASTOA | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | RFL1N10 vs ZVN4306ASTOA |
| BST120-T | NXP Semiconductors | Check for Price | TRANSISTOR 300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | RFL1N10 vs BST120-T |
| 2N5639RLRA | onsemi | Check for Price | JFET Chopper Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL | RFL1N10 vs 2N5639RLRA |