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Memory / SRAMs / R1RW0416DSB-2LR
Datasheets
R1RW0416DSB-2LR by: Renesas Electronics Corporation

256KX16 STANDARD SRAM, 12ns, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44

Part Details for R1RW0416DSB-2LR by Renesas Electronics Corporation

Overview of R1RW0416DSB-2LR by Renesas Electronics Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Computing and Data Storage Telecommunications

Available Datasheets

Part # Manufacturer Description Datasheet
R1RW0416DSB-0PI#S0 Renesas Electronics Corporation Wide Temperature Range Version 4M High-speed SRAM (256-kword x 16-bit), TSOP(44), /Embossed Tape
R1RW0416DSB-0PR#S1 Renesas Electronics Corporation 4M High-speed SRAM (256-kword × 16-bit)
R1RW0416DSB-0PI#D0 Renesas Electronics Corporation Wide Temperature Range Version 4M High-speed SRAM (256-kword x 16-bit), TSOP(44), /Tray

Price & Stock for R1RW0416DSB-2LR

Part # Distributor Description Stock Price Buy
Bristol Electronics   9
RFQ

Part Details for R1RW0416DSB-2LR

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R1RW0416DSB-2LR Part Data Attributes

Parametric Data
R1RW0416DSB-2LR Renesas Electronics Corporation
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R1RW0416DSB-2LR Renesas Electronics Corporation 256KX16 STANDARD SRAM, 12ns, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code TSOP2
Package Description SOP, TSOP44,.46,32
Pin Count 44
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.41
Samacsys Manufacturer Renesas Electronics
Access Time-Max 12 ns
I/O Type COMMON
JESD-30 Code R-PDSO-G44
Length 18.41 mm
Memory Density 4194304 bit
Memory IC Type STANDARD SRAM
Memory Width 16
Moisture Sensitivity Level 2
Number of Functions 1
Number of Terminals 44
Number of Words 262144 words
Number of Words Code 256000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 256KX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOP
Package Equivalence Code TSOP44,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Standby Voltage-Min 2 V
Supply Current-Max 0.13 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 20
Width 10.16 mm

Alternate Parts for R1RW0416DSB-2LR

This table gives cross-reference parts and alternative options found for R1RW0416DSB-2LR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R1RW0416DSB-2LR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AS7C34098-12TCN Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, LEAD FREE, TSOP2-44 Alliance Memory Inc R1RW0416DSB-2LR vs AS7C34098-12TCN
CY7C1041BV33L-12ZC Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, TSOP2-44 Cypress Semiconductor R1RW0416DSB-2LR vs CY7C1041BV33L-12ZC
KM616V4002BLTI-12 Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 Samsung Semiconductor R1RW0416DSB-2LR vs KM616V4002BLTI-12
AS7C34098-12TIN Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, LEAD FREE, TSOP2-44 Alliance Semiconductor Corporation R1RW0416DSB-2LR vs AS7C34098-12TIN
IDT71V416S12PHG Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Integrated Device Technology Inc R1RW0416DSB-2LR vs IDT71V416S12PHG
CY7C1041CV33-12ZXCT Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, LEAD FREE, TSOP2-44 Cypress Semiconductor R1RW0416DSB-2LR vs CY7C1041CV33-12ZXCT
K6R4016V1B-TI12 Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Samsung Semiconductor R1RW0416DSB-2LR vs K6R4016V1B-TI12
AS7C34098A-12TI Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, TSOP2-44 Alliance Memory Inc R1RW0416DSB-2LR vs AS7C34098A-12TI
CY7C1041CV33-12ZCT Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, TSOP2-44 Rochester Electronics LLC R1RW0416DSB-2LR vs CY7C1041CV33-12ZCT
CY7C1041BV33L-12ZCT Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, TSOP2-44 Cypress Semiconductor R1RW0416DSB-2LR vs CY7C1041BV33L-12ZCT
Part Number Description Manufacturer Compare
IDT71V416YL12YG Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 Integrated Device Technology Inc R1RW0416DSB-2LR vs IDT71V416YL12YG
CY7C1041BV33-12ZC Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, TSOP2-44 Cypress Semiconductor R1RW0416DSB-2LR vs CY7C1041BV33-12ZC
71V416L12PHG 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout, TSOP135/Tray Renesas Electronics Corporation R1RW0416DSB-2LR vs 71V416L12PHG
IDT71V416YFS12PH Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Integrated Device Technology Inc R1RW0416DSB-2LR vs IDT71V416YFS12PH
IDT71V416L12YI8 Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 Integrated Device Technology Inc R1RW0416DSB-2LR vs IDT71V416L12YI8
IDT71V416YL12Y Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 Integrated Device Technology Inc R1RW0416DSB-2LR vs IDT71V416YL12Y
K6R4016V1B-TI12 Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Samsung Semiconductor R1RW0416DSB-2LR vs K6R4016V1B-TI12
PDM31564SA12SOTR Standard SRAM, 512KX8, 12ns, CMOS, PDSO44 Paradigm Technology Inc R1RW0416DSB-2LR vs PDM31564SA12SOTR
KM616V4002CIJ-12 Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 Samsung Semiconductor R1RW0416DSB-2LR vs KM616V4002CIJ-12
IDT71V416L12PHGI8 Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Integrated Device Technology Inc R1RW0416DSB-2LR vs IDT71V416L12PHGI8

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