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Transistors Power Field-Effect Transistors PSMN8R5-60YS

PSMN8R5-60YS
Description: Power Field-Effect Transistor

Overview of PSMN8R5-60YS by Nexperia

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

CAD Models for PSMN8R5-60YS by Nexperia
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Part Data Attributes for PSMN8R5-60YS by Nexperia
Parametric Data

PSMN8R5-60YS
Nexperia
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
NEXPERIA
Package Description
SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Date Of Intro
2017-02-01
Samacsys Manufacturer
Nexperia
Avalanche Energy Rating (Eas)
97 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
76 A
Drain-source On Resistance-Max
0.008 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MO-235
JESD-30 Code
R-PSSO-G4
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
303 A
Surface Mount
YES
Terminal Finish
TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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Alternate Parts for PSMN8R5-60YS

This table gives cross-reference parts and alternative options found for PSMN8R5-60YS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN8R5-60YS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
PHM30NQ10T,518 PHM30NQ10T NXP Semiconductors PSMN8R5-60YS vs PHM30NQ10T,518
PSMN039-100YS TRANSISTOR 28.1 A, 100 V, 0.0395 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PSMN8R5-60YS vs PSMN039-100YS
PSMN020-100YS TRANSISTOR 43 A, 100 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PSMN8R5-60YS vs PSMN020-100YS
PH1955L TRANSISTOR 40 A, 55 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PSMN8R5-60YS vs PH1955L
PH1955L,115 PH1955L - N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin Nexperia PSMN8R5-60YS vs PH1955L,115
PH1955L,115 PH1955L - N-channel TrenchMOS logic level FET SOIC 4-Pin NXP Semiconductors PSMN8R5-60YS vs PH1955L,115
PSMN8R5-60YS TRANSISTOR 76 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PSMN8R5-60YS vs PSMN8R5-60YS
PH20100S,115 PH20100S - N-channel TrenchMOS standard level FET SOIC 4-Pin NXP Semiconductors PSMN8R5-60YS vs PH20100S,115
PSMN020-100YS Power Field-Effect Transistor, 43A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 Nexperia PSMN8R5-60YS vs PSMN020-100YS
PSMN3R3-40YS Power Field-Effect Transistor Nexperia PSMN8R5-60YS vs PSMN3R3-40YS

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