Part Details for NTMFS4925NET1G by onsemi
Overview of NTMFS4925NET1G by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTMFS4925NET1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
C1S541900758528
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Chip1Stop | Trans MOSFET N-CH 30V 16.7A 5-Pin(4+Tab) SO-FL T/R RoHS: Compliant | 535 |
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$1.0200 / $2.2900 | Buy Now |
Part Details for NTMFS4925NET1G
NTMFS4925NET1G CAD Models
NTMFS4925NET1G Part Data Attributes
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NTMFS4925NET1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMFS4925NET1G
onsemi
Power MOSFET 30V 48A 6.0 mOhm Single N-Channel Thermally Enhanced SO-8FL, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN5 5X6, 1.27P (SO 8FL) | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, CASE 488AA-01, SO-8FL, DFN5, 6 PIN | |
| Pin Count | 5 | |
| Manufacturer Package Code | 488AA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 16.7 A | |
| Drain-source On Resistance-Max | 0.001 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 23.2 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for NTMFS4925NET1G
This table gives cross-reference parts and alternative options found for NTMFS4925NET1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMFS4925NET1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDH8436D84Z | Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 | Fairchild Semiconductor Corporation | NTMFS4925NET1G vs NDH8436D84Z |
| SI4300DY-T1-E3 | TRANSISTOR 6400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal | Vishay Siliconix | NTMFS4925NET1G vs SI4300DY-T1-E3 |
| NDH8436X | 5800mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-8 | Texas Instruments | NTMFS4925NET1G vs NDH8436X |
| FDS6630AD84Z | Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | NTMFS4925NET1G vs FDS6630AD84Z |
| FDS9412D84Z | Small Signal Field-Effect Transistor, 7.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | NTMFS4925NET1G vs FDS9412D84Z |
| FDS9412 | Small Signal Field-Effect Transistor, 7.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | NTMFS4925NET1G vs FDS9412 |
| PHN103T/T3 | TRANSISTOR 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SO-8, FET General Purpose Small Signal | NXP Semiconductors | NTMFS4925NET1G vs PHN103T/T3 |
| FDS6630A | Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | NTMFS4925NET1G vs FDS6630A |
| IRF7807VD2PBF | Small Signal Field-Effect Transistor, 8.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | NTMFS4925NET1G vs IRF7807VD2PBF |
| FDS6630AL86Z | Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | NTMFS4925NET1G vs FDS6630AL86Z |