Datasheets
NTE478 by: NTE Electronics Inc

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN

Part Details for NTE478 by NTE Electronics Inc

Overview of NTE478 by NTE Electronics Inc

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Price & Stock for NTE478

Part # Distributor Description Stock Price Buy
DISTI # 31C4219
Newark Transistor, bjt, npn,18V V(Br)Ceo,15A I(C),sot-119 |Nte Electronics NTE478 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Onlinecomponents.com Transistor NPN Silicon 36V IC=15A Po=100W 130-175 Mhz RF Power Output RoHS: Compliant 2 In Stock
  • 1 $111.0300
  • 5 $101.2000
  • 10 $96.7800
  • 25 $91.4800
  • 50 $89.0400
  • 100 $86.7400
  • 250 $84.5500
$84.5500 / $111.0300 Buy Now
Bristol Electronics   1
RFQ
Quest Components RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN 7
  • 1 $82.2315
  • 7 $79.0688
$79.0688 / $82.2315 Buy Now
Quest Components RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN 1
  • 1 $71.5000
$71.5000 Buy Now
Quest Components RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN 1
  • 1 $163.2728
$163.2728 Buy Now

Part Details for NTE478

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NTE478 Part Data Attributes

NTE478 NTE Electronics Inc
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NTE478 NTE Electronics Inc RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Package Description FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Additional Feature DIFFUSED BALLAST RESISTORS
Collector Current-Max (IC) 20 A
Collector-Base Capacitance-Max 354 pF
Collector-Emitter Voltage-Max 18 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 270 W
Power Dissipation-Max (Abs) 270 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for NTE478

This table gives cross-reference parts and alternative options found for NTE478. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE478, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MS1507 Transistor, Microsemi Corporation NTE478 vs MS1507
TP5025 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC NTE478 vs TP5025
BLY92C/01 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors NTE478 vs BLY92C/01
NTE477 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN NTE Electronics Inc NTE478 vs NTE477
TP3031 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC NTE478 vs TP3031
TP3034 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC NTE478 vs TP3034
BLU30/28 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors NTE478 vs BLU30/28
2N5945 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC NTE478 vs 2N5945
SD1214-12 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M104, 4 PIN Microsemi Corporation NTE478 vs SD1214-12
MRF860 RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN Motorola Semiconductor Products NTE478 vs MRF860

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