Part Details for NTE359 by NTE Electronics Inc
Overview of NTE359 by NTE Electronics Inc
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTE359
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31C3972
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Newark | Transistor, bjt, npn,35V V(Br)Ceo,3A I(C),sot-122 |Nte Electronics NTE359 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Bristol Electronics | Min Qty: 1 | 2 |
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$78.0000 | Buy Now |
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Quest Components | RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN | 5 |
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$67.1775 | Buy Now |
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Quest Components | RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN | 1 |
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$84.5000 | Buy Now |
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DISTI #
NTE359
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TME | Transistor: NPN, bipolar, RF, 35V, 3A, 30W, T72H, Pout: 20W Min Qty: 1 | 0 |
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$68.9000 / $96.5000 | RFQ |
Part Details for NTE359
NTE359 CAD Models
NTE359 Part Data Attributes:
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NTE359
NTE Electronics Inc
Buy Now
Datasheet
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Compare Parts:
NTE359
NTE Electronics Inc
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Package Description | POST/STUD MOUNT, O-CRPM-F4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Collector Current-Max (IC) | 3 A | |
| Collector-Emitter Voltage-Max | 35 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 5 | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JESD-30 Code | O-CRPM-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | POST/STUD MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 30 W | |
| Power Dissipation-Max (Abs) | 30 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | FLAT | |
| Terminal Position | RADIAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for NTE359
This table gives cross-reference parts and alternative options found for NTE359. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE359, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MRF325 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | Motorola Semiconductor Products | NTE359 vs MRF325 |
| SD1214-12 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M104, 4 PIN | Microsemi Corporation | NTE359 vs SD1214-12 |
| 2SC2104 | TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | Toshiba America Electronic Components | NTE359 vs 2SC2104 |
| BLY91C/01 | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | NXP Semiconductors | NTE359 vs BLY91C/01 |
| NTE475 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | NTE Electronics Inc | NTE359 vs NTE475 |
| BLV897 | TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-324B, 5 PIN, BIP RF Power | NXP Semiconductors | NTE359 vs BLV897 |
| NTE350F | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | NTE Electronics Inc | NTE359 vs NTE350F |
| NTE363 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | NTE Electronics Inc | NTE359 vs NTE363 |
| BLY87C/01 | TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | NXP Semiconductors | NTE359 vs BLY87C/01 |
| NTE350 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, T72H, 4 PIN | NTE Electronics Inc | NTE359 vs NTE350 |