Part Details for NT5TU256M4DE-3C by Nanya Technology Corporation
Overview of NT5TU256M4DE-3C by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Consumer Electronics
Industrial Automation
Computing and Data Storage
Renewable Energy
Robotics and Drones
Part Details for NT5TU256M4DE-3C
NT5TU256M4DE-3C CAD Models
NT5TU256M4DE-3C Part Data Attributes
|
|
NT5TU256M4DE-3C
Nanya Technology Corporation
Buy Now
Datasheet
|
Compare Parts:
NT5TU256M4DE-3C
Nanya Technology Corporation
DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, GREEN, BGA-60
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA60,9X11,32 | |
| Pin Count | 60 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| Length | 10 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA60,9X11,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Supply Current-Max | 0.238 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 8 mm |
Alternate Parts for NT5TU256M4DE-3C
This table gives cross-reference parts and alternative options found for NT5TU256M4DE-3C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5TU256M4DE-3C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT47H256M4HQ-3EIT:G | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | NT5TU256M4DE-3C vs MT47H256M4HQ-3EIT:G |
| K4T1G044QC-ZLE60 | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60 | Samsung Semiconductor | NT5TU256M4DE-3C vs K4T1G044QC-ZLE60 |
| MT47H256M4HV-3LIT:G | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 | Micron Technology Inc | NT5TU256M4DE-3C vs MT47H256M4HV-3LIT:G |
| K4T1G044QF-BCE60 | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | NT5TU256M4DE-3C vs K4T1G044QF-BCE60 |
| MT47H256M4CF-3ELIT:H | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | NT5TU256M4DE-3C vs MT47H256M4CF-3ELIT:H |
| MT47H256M4HQ-3IT:G | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | NT5TU256M4DE-3C vs MT47H256M4HQ-3IT:G |
| K4T1G044QC-ZCE6 | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60 | Samsung Semiconductor | NT5TU256M4DE-3C vs K4T1G044QC-ZCE6 |
| MT47H256M4HQ-3ELAT:E | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | NT5TU256M4DE-3C vs MT47H256M4HQ-3ELAT:E |
| HYB18T1G400C4F-3S | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 | Qimonda AG | NT5TU256M4DE-3C vs HYB18T1G400C4F-3S |
| MT47H256M4JN-3ELIT:H | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 | Micron Technology Inc | NT5TU256M4DE-3C vs MT47H256M4JN-3ELIT:H |