Part Details for NT128S64VH4A2GM-8B by Nanya Technology Corporation
Overview of NT128S64VH4A2GM-8B by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NT128S64VH4A2GM-8B
NT128S64VH4A2GM-8B CAD Models
NT128S64VH4A2GM-8B Part Data Attributes
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NT128S64VH4A2GM-8B
Nanya Technology Corporation
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Datasheet
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NT128S64VH4A2GM-8B
Nanya Technology Corporation
Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | MODULE | |
| Package Description | DIMM, DIMM144,32 | |
| Pin Count | 144 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 125 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N144 | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 144 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM144,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.008 A | |
| Supply Current-Max | 0.68 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL |
Alternate Parts for NT128S64VH4A2GM-8B
This table gives cross-reference parts and alternative options found for NT128S64VH4A2GM-8B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT128S64VH4A2GM-8B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| WED3DG6416V7D1 | Synchronous DRAM Module, 16MX64, CMOS, SODIMM-144 | Microsemi Corporation | NT128S64VH4A2GM-8B vs WED3DG6416V7D1 |
| M463S1724BN0-L1L | Synchronous DRAM Module, 16MX64, 7ns, CMOS, MICRO, DIMM-144 | Samsung Semiconductor | NT128S64VH4A2GM-8B vs M463S1724BN0-L1L |
| M464S1654DTS-L1H | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 | Samsung Semiconductor | NT128S64VH4A2GM-8B vs M464S1654DTS-L1H |
| HYS64V16220GDL-7.5-C | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | Infineon Technologies AG | NT128S64VH4A2GM-8B vs HYS64V16220GDL-7.5-C |
| HB52RD168DB-B6FL | Synchronous DRAM Module, 16MX4, 6ns, CMOS, SODIMM-144 | Hitachi Ltd | NT128S64VH4A2GM-8B vs HB52RD168DB-B6FL |
| MC-4516CD641ES-A80 | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SOCKET TYPE, SODIMM-144 | Elpida Memory Inc | NT128S64VH4A2GM-8B vs MC-4516CD641ES-A80 |
| HYM72V16M656BT6-S | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 | SK Hynix Inc | NT128S64VH4A2GM-8B vs HYM72V16M656BT6-S |
| DP3ED16MX64RSW5-50CT | EDO DRAM Module, 16MX64, 50ns, CMOS | B&B Electronics Manufacturing Company | NT128S64VH4A2GM-8B vs DP3ED16MX64RSW5-50CT |
| WED3DG6416V75D1 | Synchronous DRAM Module, 16MX64, CMOS, SODIMM-144 | Microsemi Corporation | NT128S64VH4A2GM-8B vs WED3DG6416V75D1 |
| MT8LSDT1664LHY-133B1 | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | Micron Technology Inc | NT128S64VH4A2GM-8B vs MT8LSDT1664LHY-133B1 |