Datasheets
NGB8206ANT4G by:

Ignition IGBT, N-Channel, 20 A, 350 V, D2PAK 2 LEAD, 800-REEL

Part Details for NGB8206ANT4G by onsemi

Overview of NGB8206ANT4G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NGB8206ANT4G

Part # Distributor Description Stock Price Buy
DISTI # 2156-NGB8206ANT4G-ND
DigiKey IGBT, 20A, 390V, N-CHANNEL Min Qty: 417 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 32020
In Stock
  • 417 $0.7200
$0.7200 Buy Now
Rochester Electronics NGB8206 - Insulated Gate Bipolar Transistor, 20A, 390V, N-Channel ' RoHS: Compliant Status: Obsolete Min Qty: 1 32020
RFQ

Part Details for NGB8206ANT4G

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NGB8206ANT4G Part Data Attributes

NGB8206ANT4G onsemi
Buy Now Datasheet
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NGB8206ANT4G onsemi Ignition IGBT, N-Channel, 20 A, 350 V, D2PAK 2 LEAD, 800-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer ONSEMI
Part Package Code SFM
Package Description LEAD FREE, CASE 418B-04, D2PAK-3
Pin Count 3
Manufacturer Package Code 418B-04
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 390 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Fall Time-Max (tf) 14000 ns
Gate-Emitter Thr Voltage-Max 2.1 V
Gate-Emitter Voltage-Max 15 V
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Rise Time-Max (tr) 8000 ns
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 18500 ns
Turn-on Time-Nom (ton) 6500 ns

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