Datasheets
NEZ5964-8DD by:

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

Part Details for NEZ5964-8DD by California Eastern Laboratories (CEL)

Overview of NEZ5964-8DD by California Eastern Laboratories (CEL)

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Part Details for NEZ5964-8DD

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NEZ5964-8DD Part Data Attributes

NEZ5964-8DD California Eastern Laboratories (CEL)
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NEZ5964-8DD California Eastern Laboratories (CEL) RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer CALIFORNIA EASTERN LABORATORIES
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 15 V
Drain Current-Max (ID) 7 A
FET Technology METAL SEMICONDUCTOR
Highest Frequency Band C BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 50 W
Power Gain-Min (Gp) 8.5 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for NEZ5964-8DD

This table gives cross-reference parts and alternative options found for NEZ5964-8DD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NEZ5964-8DD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NEZ5964-35E RF Power Field-Effect Transistor, T-65, 2 PIN NEC Electronics America Inc NEZ5964-8DD vs NEZ5964-35E
NEZ5964-15DD RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET NEC Electronics Group NEZ5964-8DD vs NEZ5964-15DD
NEZ5964-15D RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, NEC Electronics America Inc NEZ5964-8DD vs NEZ5964-15D
NEZ5964-4DD RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) NEZ5964-8DD vs NEZ5964-4DD
NEZ5964-35E RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, T-65, 2 PIN California Eastern Laboratories (CEL) NEZ5964-8DD vs NEZ5964-35E
NEZ5964-4DD C BAND, GaAs, N-CHANNEL, RF POWER, MESFET Renesas Electronics Corporation NEZ5964-8DD vs NEZ5964-4DD
NEZ5964-8D RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, NEC Electronics America Inc NEZ5964-8DD vs NEZ5964-8D
NEZ5964-4D RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, NEC Electronics America Inc NEZ5964-8DD vs NEZ5964-4D
NEZ5964-8D RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN California Eastern Laboratories (CEL) NEZ5964-8DD vs NEZ5964-8D
NEZ5964-15DL RF Power Field-Effect Transistor, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, NEC Electronics America Inc NEZ5964-8DD vs NEZ5964-15DL

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