Part Details for NES150 by Microsemi Corporation
Overview of NES150 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NES150
NES150 CAD Models
NES150 Part Data Attributes
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NES150
Microsemi Corporation
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Datasheet
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NES150
Microsemi Corporation
Power Field-Effect Transistor, 30A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-204AA | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-3 | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for NES150
This table gives cross-reference parts and alternative options found for NES150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NES150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF151 | 40A, 60V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STMicroelectronics | NES150 vs IRF151 |
| 2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Advanced Semiconductor Inc | NES150 vs 2N6764 |
| 2N6764-QR-BR1 | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | NES150 vs 2N6764-QR-BR1 |
| UFN153 | Power Field-Effect Transistor, 33A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | NES150 vs UFN153 |
| JANTX2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | NES150 vs JANTX2N6764 |
| IRF152 | 33A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Motorola Mobility LLC | NES150 vs IRF152 |
| IRF150-JQR-B | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | NES150 vs IRF150-JQR-B |
| JANTXV2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Motorola Semiconductor Products | NES150 vs JANTXV2N6764 |
| JANHCA2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | NES150 vs JANHCA2N6764 |
| UFN151 | Power Field-Effect Transistor, 40A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | NES150 vs UFN151 |