There are no models available for this part yet.
Overview of NE76000L by California Eastern Laboratories (CEL)
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Robotics and Drones
CAD Models for NE76000L by California Eastern Laboratories (CEL)
Part Data Attributes for NE76000L by California Eastern Laboratories (CEL)
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|---|---|
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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CALIFORNIA EASTERN LABORATORIES
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Package Description
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UNCASED CHIP, R-XUUC-N6
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Additional Feature
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LOW NOISE
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
|
5 V
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Drain Current-Max (ID)
|
0.08 A
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FET Technology
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METAL SEMICONDUCTOR
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Highest Frequency Band
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K BAND
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JESD-30 Code
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R-XUUC-N6
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Number of Elements
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1
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Number of Terminals
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6
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Operating Mode
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DEPLETION MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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UNSPECIFIED
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Package Shape
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RECTANGULAR
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Package Style
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UNCASED CHIP
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Polarity/Channel Type
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N-CHANNEL
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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NO LEAD
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Terminal Position
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UPPER
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Transistor Application
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AMPLIFIER
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Transistor Element Material
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GALLIUM ARSENIDE
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Alternate Parts for NE76000L
This table gives cross-reference parts and alternative options found for NE76000L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE76000L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE32500N | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 | NEC Compound Semiconductor Devices Ltd | NE76000L vs NE32500N |
| NE76100N | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5 | NEC Electronics America Inc | NE76000L vs NE76100N |
| NE38018T2-A | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE76000L vs NE38018T2-A |
| NE33200 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET | NEC Electronics Group | NE76000L vs NE33200 |
| FHX05X | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE | FUJITSU Limited | NE76000L vs FHX05X |
| NE33200N | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET | NEC Electronics Group | NE76000L vs NE33200N |
| NE38018 | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE76000L vs NE38018 |
| NE32500M | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 | NEC Compound Semiconductor Devices Ltd | NE76000L vs NE32500M |
| LP7512P70 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | Filtronic plc | NE76000L vs LP7512P70 |
| FHX04X | RF Small Signal Field-Effect Transistor | FUJITSU Semiconductor Limited | NE76000L vs FHX04X |