NE76000L
vs
NE32500M
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
CALIFORNIA EASTERN LABORATORIES
|
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
|
| Package Description |
UNCASED CHIP, R-XUUC-N6
|
DIE-4
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW NOISE
|
HIGH RELIABILITY
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
5 V
|
4 V
|
| Drain Current-Max (ID) |
0.08 A
|
|
| FET Technology |
METAL SEMICONDUCTOR
|
HETERO-JUNCTION
|
| Highest Frequency Band |
K BAND
|
KA BAND
|
| JESD-30 Code |
R-XUUC-N6
|
S-XUUC-N4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
6
|
4
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
UNCASED CHIP
|
UNCASED CHIP
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
UPPER
|
UPPER
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Power Gain-Min (Gp) |
|
11 dB
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare NE76000L with alternatives
Compare NE32500M with alternatives