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Overview of MV1N8168 by Microsemi Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for MV1N8168 by Microsemi Corporation
Part Data Attributes for MV1N8168 by Microsemi Corporation
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|
|
|---|---|
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Rohs Code
|
No
|
|
Part Life Cycle Code
|
Transferred
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|
Ihs Manufacturer
|
MICROSEMI CORP
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Reach Compliance Code
|
compliant
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|
ECCN Code
|
EAR99
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HTS Code
|
8541.10.00.50
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|
Additional Feature
|
HIGH RELIABILITY
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Breakdown Voltage-Min
|
48.5 V
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|
Case Connection
|
ISOLATED
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Clamping Voltage-Max
|
70.1 V
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|
Configuration
|
SINGLE
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|
Diode Element Material
|
SILICON
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Diode Type
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TRANS VOLTAGE SUPPRESSOR DIODE
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|
JESD-30 Code
|
O-LALF-W2
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Non-rep Peak Rev Power Dis-Max
|
150 W
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Number of Elements
|
1
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Number of Terminals
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2
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Operating Temperature-Max
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175 °C
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Operating Temperature-Min
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-55 °C
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Package Body Material
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GLASS
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Package Shape
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ROUND
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Package Style
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LONG FORM
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Polarity
|
UNIDIRECTIONAL
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Power Dissipation-Max
|
1 W
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Reference Standard
|
IEC-61000-4-2,4-4,4-5
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|
Rep Pk Reverse Voltage-Max
|
43 V
|
|
Reverse Current-Max
|
0.5 µA
|
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Surface Mount
|
NO
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Technology
|
AVALANCHE
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Terminal Form
|
WIRE
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Terminal Position
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AXIAL
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