Datasheets
MT4C4001JCN-12/883C by:

Fast Page DRAM, 1MX4, 120ns, CMOS, CDIP20, DIP-20

Part Details for MT4C4001JCN-12/883C by Micross Components

Overview of MT4C4001JCN-12/883C by Micross Components

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Entertainment and Gaming

Available Datasheets

Part # Manufacturer Description Datasheet
54HC221AJ/883C Rochester Electronics Replacement for National Semiconductor part number MM54HC221AJ/883C. Buy from authorized manufacturer Rochester Electronics.
UHC508J/883C Rochester Electronics LLC UHC508 - POWER DRIVER, NAND, QUAD 2-INPUT - Dual marked (8550001DA)
54LS154F/883C Rochester Electronics LLC 54LS154 - 4-Line to 16-Line Decoder/Demultiplexer

Part Details for MT4C4001JCN-12/883C

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MT4C4001JCN-12/883C Part Data Attributes

MT4C4001JCN-12/883C Micross Components
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MT4C4001JCN-12/883C Micross Components Fast Page DRAM, 1MX4, 120ns, CMOS, CDIP20, DIP-20
Pbfree Code No
Rohs Code No
Part Life Cycle Code End Of Life
Ihs Manufacturer MICROSS COMPONENTS
Part Package Code DIP
Package Description DIP, DIP20,.3
Pin Count 20
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE
Access Time-Max 120 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type COMMON
JESD-30 Code R-CDIP-T20
JESD-609 Code e0
Memory Density 4194304 bit
Memory IC Type FAST PAGE DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 20
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Organization 1MX4
Output Characteristics 3-STATE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Code DIP
Package Equivalence Code DIP20,.3
Package Shape RECTANGULAR
Package Style IN-LINE
Qualification Status Not Qualified
Refresh Cycles 1024
Screening Level MIL-STD-883
Seated Height-Max 5.08 mm
Self Refresh NO
Standby Current-Max 0.002 A
Supply Current-Max 0.07 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL
Width 7.62 mm

Alternate Parts for MT4C4001JCN-12/883C

This table gives cross-reference parts and alternative options found for MT4C4001JCN-12/883C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT4C4001JCN-12/883C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT4C4001JCN-12/XT Fast Page DRAM, 1MX4, 120ns, CMOS, CDIP20, 0.300 INCH, CERAMIC, DIP-20 Micross Components MT4C4001JCN-12/883C vs MT4C4001JCN-12/XT
5962-9084701MRX Fast Page DRAM, 1MX4, 120ns, CMOS, CDIP20, 0.300 INCH, CERAMIC, DIP-20 Micross Components MT4C4001JCN-12/883C vs 5962-9084701MRX
MT4C4001JCN-12/IT Fast Page DRAM, 1MX4, 120ns, CMOS, CDIP20, 0.300 INCH, CERAMIC, DIP-20 Micross Components MT4C4001JCN-12/883C vs MT4C4001JCN-12/IT
Part Number Description Manufacturer Compare
TC514402AP-60 IC 1M X 4 STATIC COLUMN DRAM, 60 ns, PDIP20, 0.300 INCH, PLASTIC, DIP-20, Dynamic RAM Toshiba America Electronic Components MT4C4001JCN-12/883C vs TC514402AP-60
KM44V1004CP-L7 EDO DRAM, 1MX4, 70ns, CMOS, PDIP20, 0.300 INCH, DIP-20 Samsung Semiconductor MT4C4001JCN-12/883C vs KM44V1004CP-L7
TC514402AP-10 IC 1M X 4 STATIC COLUMN DRAM, 100 ns, PDIP20, 0.300 INCH, PLASTIC, DIP-20, Dynamic RAM Toshiba America Electronic Components MT4C4001JCN-12/883C vs TC514402AP-10
KM44C1000BP-7 Fast Page DRAM, 1MX4, 70ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20 Samsung Semiconductor MT4C4001JCN-12/883C vs KM44C1000BP-7
KM44V1004CP-6 EDO DRAM, 1MX4, 60ns, CMOS, PDIP20, 0.300 INCH, DIP-20 Samsung Semiconductor MT4C4001JCN-12/883C vs KM44V1004CP-6
TC514400APL-80 IC 1M X 4 FAST PAGE DRAM, 80 ns, PDIP20, 0.300 INCH, PLASTIC, DIP-20, Dynamic RAM Toshiba America Electronic Components MT4C4001JCN-12/883C vs TC514400APL-80
5962-9084702MUA 1MX4 FAST PAGE DRAM, 100ns, DIP20, DIP-20 Texas Instruments MT4C4001JCN-12/883C vs 5962-9084702MUA
KM44C1002BP-8 Static Column DRAM, 1MX4, 80ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20 Samsung Semiconductor MT4C4001JCN-12/883C vs KM44C1002BP-8
KM44C1002CP-7 Static Column DRAM, 1MX4, 70ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20 Samsung Semiconductor MT4C4001JCN-12/883C vs KM44C1002CP-7
5962-9084703MUA 1MX4 FAST PAGE DRAM, 80ns, DIP20, DIP-20 Texas Instruments MT4C4001JCN-12/883C vs 5962-9084703MUA

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