Datasheets
IS42SM32400G-6BLI by: Integrated Silicon Solution Inc

Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90

Part Details for IS42SM32400G-6BLI by Integrated Silicon Solution Inc

Overview of IS42SM32400G-6BLI by Integrated Silicon Solution Inc

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Applications Industrial Automation Renewable Energy Robotics and Drones

Price & Stock for IS42SM32400G-6BLI

Part # Distributor Description Stock Price Buy
DISTI # IS42SM32400G-6BLI-ND
DigiKey IC DRAM 128MBIT PAR 90TFBGA Lead time: 12 Weeks Container: Tray Limited Supply - Call
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Part Details for IS42SM32400G-6BLI

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IS42SM32400G-6BLI Part Data Attributes

IS42SM32400G-6BLI Integrated Silicon Solution Inc
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IS42SM32400G-6BLI Integrated Silicon Solution Inc Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code DSBGA
Package Description TFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.5 ns
Additional Feature AUTO/SELF REFRESH, ALSO OPERATES AT 2.5V, 1.8V SUPPLY
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
Length 13 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.00001 A
Supply Current-Max 0.115 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for IS42SM32400G-6BLI

This table gives cross-reference parts and alternative options found for IS42SM32400G-6BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42SM32400G-6BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
M12L128324A-6BG Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, LEAD FREE, FBGA-90 Elite Semiconductor Memory Technology Inc IS42SM32400G-6BLI vs M12L128324A-6BG
MT48LC4M32B2B5-8XTES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc IS42SM32400G-6BLI vs MT48LC4M32B2B5-8XTES:G
MT48LC4M32B2F5-7ES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc IS42SM32400G-6BLI vs MT48LC4M32B2F5-7ES:G
MT48LC4M32B2B5-7AT Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc IS42SM32400G-6BLI vs MT48LC4M32B2B5-7AT
IS42VM32400G-6BLI Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42SM32400G-6BLI vs IS42VM32400G-6BLI
MT48LC4M32B2F5-7AT 4MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, (8 X 13) MM, PLASTIC, VFBGA-90 Micron Technology Inc IS42SM32400G-6BLI vs MT48LC4M32B2F5-7AT
Part Number Description Manufacturer Compare
HY57V283220TP-55 Synchronous DRAM, 4MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc IS42SM32400G-6BLI vs HY57V283220TP-55
MT48LC4M32B2B5-8XTES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc IS42SM32400G-6BLI vs MT48LC4M32B2B5-8XTES:G
IS42SM32400E-6BLI Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42SM32400G-6BLI vs IS42SM32400E-6BLI
IS45S32400B-7BA1 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, MINI, FBGA-90 Integrated Silicon Solution Inc IS42SM32400G-6BLI vs IS45S32400B-7BA1
HY57V283220TP-S Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc IS42SM32400G-6BLI vs HY57V283220TP-S
MT48LC4M32B2B5-6AAAT:L Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc IS42SM32400G-6BLI vs MT48LC4M32B2B5-6AAAT:L
HY57V283220LTP-8 Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc IS42SM32400G-6BLI vs HY57V283220LTP-8
K4S283233E-DE750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor IS42SM32400G-6BLI vs K4S283233E-DE750
HY57V283220T-8I Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc IS42SM32400G-6BLI vs HY57V283220T-8I
MT48LC4M32B2B5-7AT:L Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc IS42SM32400G-6BLI vs MT48LC4M32B2B5-7AT:L

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