Memory
MT47H64M8B6-25AT:D
Micron Technology Inc
Description: DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60

Overview of MT47H64M8B6-25AT:D by Micron Technology Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
74FCT825ATQ8 Renesas Electronics Corporation 8-BIT NON-INVERTING REGIS
74FCT825ATSO Renesas Electronics Corporation 8-BIT NON-INVERTING REGIS
54FCT825ATDB Renesas Electronics Corporation 8-BIT NON-INVERTING REGIS

CAD Models for MT47H64M8B6-25AT:D by Micron Technology Inc
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Part Data Attributes for MT47H64M8B6-25AT:D by Micron Technology Inc

MT47H64M8B6-25AT:D
Micron Technology Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
Part Package Code
BGA
Package Description
TFBGA, BGA60,9X11,32
Pin Count
60
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.4 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
400 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
S-PBGA-B60
JESD-609 Code
e1
Length
10 mm
Memory Density
536870912 bit
Memory IC Type
DDR2 DRAM
Memory Width
8
Number of Functions
1
Number of Ports
1
Number of Terminals
60
Number of Words
67108864 words
Number of Words Code
64000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
105 °C
Operating Temperature-Min
-40 °C
Organization
64MX8
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA60,9X11,32
Package Shape
SQUARE
Package Style
GRID ARRAY
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
4,8
Standby Current-Max
0.007 A
Supply Current-Max
0.3 mA
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
10 mm
Want to compare parts?
  1. MT47H64M8B6-25AT:D
    Micron Technology Inc
    DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60
    VS

Alternate Parts for MT47H64M8B6-25AT:D

This table gives cross-reference parts and alternative options found for MT47H64M8B6-25AT:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H64M8B6-25AT:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT47H64M8F6-25EAT:D DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H64M8B6-25AT:D vs MT47H64M8F6-25EAT:D
MT47H64M8F6-25AT:D DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H64M8B6-25AT:D vs MT47H64M8F6-25AT:D
MT47H64M8F6-25LAT:D DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H64M8B6-25AT:D vs MT47H64M8F6-25LAT:D
MT47H64M8B6-25LAT:D DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H64M8B6-25AT:D vs MT47H64M8B6-25LAT:D
MT47H64M8B6-25EAT:D DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H64M8B6-25AT:D vs MT47H64M8B6-25EAT:D
Part Number Description Manufacturer Compare
HY5PS12821FP-Y5 DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, LEAD FREE, FBGA-60 SK Hynix Inc MT47H64M8B6-25AT:D vs HY5PS12821FP-Y5
V59C1512804QDLF5H DDR DRAM, 64MX8, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc MT47H64M8B6-25AT:D vs V59C1512804QDLF5H
HYB25D512800DF-6 DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 Qimonda AG MT47H64M8B6-25AT:D vs HYB25D512800DF-6
V59C1512804QDUP3E DDR DRAM, 64MX8, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT47H64M8B6-25AT:D vs V59C1512804QDUP3E
NT5TU64M8CE-25CI DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, BGA-60 Nanya Technology Corporation MT47H64M8B6-25AT:D vs NT5TU64M8CE-25CI
MT47H64M8CF-3AT:G DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H64M8B6-25AT:D vs MT47H64M8CF-3AT:G
V58C2512804SALJ4 DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT47H64M8B6-25AT:D vs V58C2512804SALJ4
V59C1512804QBLF25 DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, M0-207, FBGA-60 ProMOS Technologies Inc MT47H64M8B6-25AT:D vs V59C1512804QBLF25
V59C1512804QCF3 64MX8 DDR DRAM, 0.45ns, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc MT47H64M8B6-25AT:D vs V59C1512804QCF3
V59C1512804QCLF-19 DDR DRAM, 64MX8, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc MT47H64M8B6-25AT:D vs V59C1512804QCLF-19

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