Datasheets
MT47H64M8B6-25EAT:D by: Micron Technology Inc

DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60

Part Details for MT47H64M8B6-25EAT:D by Micron Technology Inc

Overview of MT47H64M8B6-25EAT:D by Micron Technology Inc

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Available Datasheets

Part # Manufacturer Description Datasheet
DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB.
DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness.
DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness.

Part Details for MT47H64M8B6-25EAT:D

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MT47H64M8B6-25EAT:D Part Data Attributes

MT47H64M8B6-25EAT:D Micron Technology Inc
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MT47H64M8B6-25EAT:D Micron Technology Inc DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description TFBGA, BGA60,9X11,32
Pin Count 60
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code S-PBGA-B60
JESD-609 Code e1
Length 10 mm
Memory Density 536870912 bit
Memory IC Type DDR2 DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 105 °C
Operating Temperature-Min -40 °C
Organization 64MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA60,9X11,32
Package Shape SQUARE
Package Style GRID ARRAY
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.007 A
Supply Current-Max 0.3 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 10 mm

Alternate Parts for MT47H64M8B6-25EAT:D

This table gives cross-reference parts and alternative options found for MT47H64M8B6-25EAT:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H64M8B6-25EAT:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H64M8B6-25ELAT:D DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H64M8B6-25EAT:D vs MT47H64M8B6-25ELAT:D
MT47H64M8F6-25ELAT:D DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H64M8B6-25EAT:D vs MT47H64M8F6-25ELAT:D
MT47H64M8F6-25LAT:D DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H64M8B6-25EAT:D vs MT47H64M8F6-25LAT:D
MT47H64M8F6-25EAT:D DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H64M8B6-25EAT:D vs MT47H64M8F6-25EAT:D
MT47H64M8B6-25AT:D DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H64M8B6-25EAT:D vs MT47H64M8B6-25AT:D
MT47H64M8F6-25AT:D DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H64M8B6-25EAT:D vs MT47H64M8F6-25AT:D
Part Number Description Manufacturer Compare
H5DU5182EFR-K3I DDR DRAM, 64MX8, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc MT47H64M8B6-25EAT:D vs H5DU5182EFR-K3I
V59C1512804QCLF-37 DDR DRAM, 64MX8, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc MT47H64M8B6-25EAT:D vs V59C1512804QCLF-37
MT47H64M8CF-3LAT:G DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H64M8B6-25EAT:D vs MT47H64M8CF-3LAT:G
HY5PS12821FP-Y5 DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, LEAD FREE, FBGA-60 SK Hynix Inc MT47H64M8B6-25EAT:D vs HY5PS12821FP-Y5
V59C1512804QBLF25A DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, M0-207, FBGA-60 ProMOS Technologies Inc MT47H64M8B6-25EAT:D vs V59C1512804QBLF25A
K4H510838F-HCCC0 DDR DRAM, 64MX8, 0.65ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 Samsung Semiconductor MT47H64M8B6-25EAT:D vs K4H510838F-HCCC0
MT46V64M8FN-6LIT:C DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, FBGA-60 Micron Technology Inc MT47H64M8B6-25EAT:D vs MT46V64M8FN-6LIT:C
MT47H64M8CB-3E DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60 Micron Technology Inc MT47H64M8B6-25EAT:D vs MT47H64M8CB-3E
V58C2512804SDLJ33E DDR DRAM, 64MX8, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT47H64M8B6-25EAT:D vs V58C2512804SDLJ33E
V59C1512804QDLJ25AI DDR DRAM, 64MX8, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT47H64M8B6-25EAT:D vs V59C1512804QDLJ25AI

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