Datasheets
MT47H32M16BN-37E by: Micron Technology Inc

DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84

Part Details for MT47H32M16BN-37E by Micron Technology Inc

Overview of MT47H32M16BN-37E by Micron Technology Inc

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Part Details for MT47H32M16BN-37E

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MT47H32M16BN-37E Part Data Attributes

MT47H32M16BN-37E Micron Technology Inc
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MT47H32M16BN-37E Micron Technology Inc DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Package Description FBGA, BGA84,9X15,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Time-Max 0.5 ns
Clock Frequency-Max (fCLK) 267 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
JESD-609 Code e3
Memory Density 536870912 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Moisture Sensitivity Level 1
Number of Terminals 84
Number of Words 33554432 words
Number of Words Code 32000000
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Standby Current-Max 0.007 A
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Terminal Finish MATTE TIN
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM

Alternate Parts for MT47H32M16BN-37E

This table gives cross-reference parts and alternative options found for MT47H32M16BN-37E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H32M16BN-37E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H32M16CC-37EL DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84 Micron Technology Inc MT47H32M16BN-37E vs MT47H32M16CC-37EL
MT47H32M16BN-37EL DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84 Micron Technology Inc MT47H32M16BN-37E vs MT47H32M16BN-37EL
MT47H32M16CC-37E DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84 Micron Technology Inc MT47H32M16BN-37E vs MT47H32M16CC-37E
Part Number Description Manufacturer Compare
K4T51163QG-HLD50 DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Samsung Semiconductor MT47H32M16BN-37E vs K4T51163QG-HLD50
V59C1512164QDLF5H DDR DRAM, 32MX16, CMOS, PBGA84, ROHS COMPLIANT, MO-207, FBGA-84 ProMOS Technologies Inc MT47H32M16BN-37E vs V59C1512164QDLF5H
V59C1512164QDUJ5E DDR DRAM, 32MX16, CMOS, PBGA84, GREEN, MO-207, FBGA-84 ProMOS Technologies Inc MT47H32M16BN-37E vs V59C1512164QDUJ5E
IS46DR16320-37CBLA1 DDR DRAM, 32MX16, CMOS, PBGA84, 13 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-84 Integrated Silicon Solution Inc MT47H32M16BN-37E vs IS46DR16320-37CBLA1
V59C1512164QBLF5 DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, ROHS COMPLIANT, MO-207, FBGA-84 ProMOS Technologies Inc MT47H32M16BN-37E vs V59C1512164QBLF5
V59C1512164QCLF3 32MX16 DDR DRAM, 0.45ns, PBGA84, ROHS COMPLIANT, MO-207, FBGA-84 ProMOS Technologies Inc MT47H32M16BN-37E vs V59C1512164QCLF3
MT47H32M16HR-37EIT:F DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 8 X 10 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H32M16BN-37E vs MT47H32M16HR-37EIT:F
HY5PS121621CLFP-E3 DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 SK Hynix Inc MT47H32M16BN-37E vs HY5PS121621CLFP-E3
V59C1512164QDUP25A DDR DRAM, 32MX16, CMOS, PBGA84, GREEN, MO-207, FBGA-84 ProMOS Technologies Inc MT47H32M16BN-37E vs V59C1512164QDUP25A
MT47H32M16HR-5EIT:F DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H32M16BN-37E vs MT47H32M16HR-5EIT:F

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