Datasheets
MT47H128M4B6-37ELAT:D by: Micron Technology Inc

DDR DRAM, 256MX4, 0.5ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60

Part Details for MT47H128M4B6-37ELAT:D by Micron Technology Inc

Overview of MT47H128M4B6-37ELAT:D by Micron Technology Inc

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Part Details for MT47H128M4B6-37ELAT:D

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MT47H128M4B6-37ELAT:D Part Data Attributes

MT47H128M4B6-37ELAT:D Micron Technology Inc
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MT47H128M4B6-37ELAT:D Micron Technology Inc DDR DRAM, 256MX4, 0.5ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description TFBGA, BGA60,9X11,32
Pin Count 60
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 266 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code S-PBGA-B60
Length 10 mm
Memory Density 1073741824 bit
Memory IC Type DDR2 DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 105 °C
Operating Temperature-Min -40 °C
Organization 256MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA60,9X11,32
Package Shape SQUARE
Package Style GRID ARRAY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.007 A
Supply Current-Max 0.225 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10 mm

Alternate Parts for MT47H128M4B6-37ELAT:D

This table gives cross-reference parts and alternative options found for MT47H128M4B6-37ELAT:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H128M4B6-37ELAT:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H128M4F6-37EAT:D DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4B6-37ELAT:D vs MT47H128M4F6-37EAT:D
MT47H128M4B6-37EAT:D DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4B6-37ELAT:D vs MT47H128M4B6-37EAT:D
MT47H128M4F6-37ELAT:D DDR DRAM, 256MX4, 0.5ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4B6-37ELAT:D vs MT47H128M4F6-37ELAT:D
Part Number Description Manufacturer Compare
K4H510438B-GLB00 DDR DRAM, 128MX4, 0.75ns, CMOS, PBGA60, FBGA-60 Samsung Semiconductor MT47H128M4B6-37ELAT:D vs K4H510438B-GLB00
MT47H128M4CB-5ELIT:B DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4B6-37ELAT:D vs MT47H128M4CB-5ELIT:B
MT47H128M4JN-3EIT:G DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4B6-37ELAT:D vs MT47H128M4JN-3EIT:G
V58C2512404SBS6 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, MO-207, FBGA-60 ProMOS Technologies Inc MT47H128M4B6-37ELAT:D vs V58C2512404SBS6
V59C1512404QDLF3H DDR DRAM, 128MX4, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc MT47H128M4B6-37ELAT:D vs V59C1512404QDLF3H
V59C1512404QCLF25AI DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 ProMOS Technologies Inc MT47H128M4B6-37ELAT:D vs V59C1512404QCLF25AI
MT47H128M4GB-25EIT:B DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 12 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4B6-37ELAT:D vs MT47H128M4GB-25EIT:B
NT5TU128M4BE-25C DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 0.80 MM PITCH, GREEN, BGA-60 Nanya Technology Corporation MT47H128M4B6-37ELAT:D vs NT5TU128M4BE-25C
V58C2512404SDLJ75H DDR DRAM, 128MX4, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT47H128M4B6-37ELAT:D vs V58C2512404SDLJ75H
NT5TU128M4AF-37B DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60, 0.80 MM PITCH, FBGA-60 Nanya Technology Corporation MT47H128M4B6-37ELAT:D vs NT5TU128M4AF-37B

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