MT40A512M16TB-062E:J
Micron Technology Inc
Description: DDR4 DRAM, 512MX16, CMOS, PBGA96,

Overview of MT40A512M16TB-062E:J by Micron Technology Inc

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Price & Stock for MT40A512M16TB-062E:J by Micron Technology Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 80AH7992
Newark Dram, 512M X 16Bit, 0 To 95Deg C, Dram Type:Ddr4, Memory Configuration:512M X 16Bit, Clock Frequency Max:1.6Ghz, Ic Case/Package:Fbga, No. Of Pins:96Pins, Supply Voltage Nom:1.2V, Ic Mounting:Surface Mount, Product Range:- Rohs Compliant: Yes |Micron MT40A512M16TB-062E:J Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 500
  • 1 $7.3700
  • 10 $7.3700
  • 25 $7.3700
  • 50 $7.3700
  • 100 $7.3700
  • 250 $7.3700
  • 500 $7.3700
$7.3700 Buy Now
DISTI # MT40A512M16TB-062E:J
Avnet Asia DRAM, DDR4, 8 Gbit, 512M x 16bit, 1.6 GHz, FBGA, 96 Pins (Alt: MT40A512M16TB-062E:J) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 0
  • 2,000 $8.2368
  • 4,000 $8.1299
  • 6,000 $8.0256
  • 10,000 $7.9241
  • 20,000 $7.7284
  • 50,000 $7.5422
  • 100,000 $7.3647
$7.3647 / $8.2368 Buy Now
Win Source Electronics IC DRAM 8GBIT PARALLEL 96FBGA 40900
  • 14 $3.8440
  • 32 $3.1540
  • 50 $3.0560
  • 68 $2.9570
  • 88 $2.8580
  • 118 $2.5630
$2.5630 / $3.8440 Buy Now

CAD Models for MT40A512M16TB-062E:J by Micron Technology Inc
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Part Data Attributes for MT40A512M16TB-062E:J by Micron Technology Inc

MT40A512M16TB-062E:J
Micron Technology Inc
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
MICRON TECHNOLOGY INC
Reach Compliance Code
compliant
Samacsys Manufacturer
Micron
Access Mode
MULTI BANK PAGE BURST
Clock Frequency-Max (fCLK)
1600 MHz
I/O Type
COMMON
Interleaved Burst Length
8
JESD-30 Code
R-PBGA-B96
Length
13 mm
Memory Density
8589934592 bit
Memory IC Type
DDR4 DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
96
Number of Words
536870912 words
Number of Words Code
512000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
95 °C
Operating Temperature-Min
Organization
512MX16
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA96,9X16,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
8
Supply Voltage-Max (Vsup)
1.26 V
Supply Voltage-Min (Vsup)
1.14 V
Supply Voltage-Nom (Vsup)
1.2 V
Surface Mount
YES
Technology
CMOS
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
7.5 mm
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    Micron Technology Inc
    DDR4 DRAM, 512MX16, CMOS, PBGA96,
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Alternate Parts for MT40A512M16TB-062E:J

This table gives cross-reference parts and alternative options found for MT40A512M16TB-062E:J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT40A512M16TB-062E:J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT40A512M16TB-062E:R DDR4 DRAM, 512MX16, CMOS, PBGA96, Micron Technology Inc MT40A512M16TB-062E:J vs MT40A512M16TB-062E:R
MT40A512M16LY-062EAUT:E DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc MT40A512M16TB-062E:J vs MT40A512M16LY-062EAUT:E
MT40A512M16LY-062E:E DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc MT40A512M16TB-062E:J vs MT40A512M16LY-062E:E
Part Number Description Manufacturer Compare
MT40A512M16LY-062E:E DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc MT40A512M16TB-062E:J vs MT40A512M16LY-062E:E
K4A8G165WB-BCRC DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Samsung Semiconductor MT40A512M16TB-062E:J vs K4A8G165WB-BCRC
MT40A512M16LY-062EAUT:E DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc MT40A512M16TB-062E:J vs MT40A512M16LY-062EAUT:E
MT40A512M16TB-062E:R DDR4 DRAM, 512MX16, CMOS, PBGA96, Micron Technology Inc MT40A512M16TB-062E:J vs MT40A512M16TB-062E:R
K4A8G165WB-BIRC0 DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Samsung Semiconductor MT40A512M16TB-062E:J vs K4A8G165WB-BIRC0
K4A8G165WB-BCRC0 DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Samsung Semiconductor MT40A512M16TB-062E:J vs K4A8G165WB-BCRC0
IS43QR16512A-075VBL DDR DRAM, Integrated Silicon Solution Inc MT40A512M16TB-062E:J vs IS43QR16512A-075VBL
MT40A512M16LY-062EAT:E DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc MT40A512M16TB-062E:J vs MT40A512M16LY-062EAT:E

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