Part Details for MRF6S20010GNR1 by NXP Semiconductors
Overview of MRF6S20010GNR1 by NXP Semiconductors
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MRF6S20010GNR1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
85AK9243
|
Newark | Gsm/Gsm Edge, Single N-Cdma, 2 X W-Cdma Lateral N-Channel Rf Power Mosfet, 1600-2200 Mhz, 10 W, 28 V/ Reel Rohs Compliant: Yes |Nxp MRF6S20010GNR1 Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$33.2900 | Buy Now |
|
DISTI #
81K3163
|
Newark | Mosfet (Metal-Oxide-Semiconductor Field-Effect Transistor) Rohs Compliant: Yes |Nxp MRF6S20010GNR1 Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$30.2400 / $30.7500 | Buy Now |
|
DISTI #
61AC0767
|
Newark | Rf Fet, 68V, 2.2Ghz-1.6Ghz, To-270G, Drain Source Voltage Vds:68V, Continuous Drain Current Id:-, Power Dissipation Pd:-, Operating Frequency Min:2.2Ghz, Operating Frequency Max:1.6Ghz, Rf Transistor Case:To-270G, No. Of Pins:2Pins, Rohs Compliant: Yes |Nxp MRF6S20010GNR1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$50.8200 | Buy Now |
|
DISTI #
MRF6S20010GNR1CT-ND
|
DigiKey | RF MOSFET LDMOS 28V TO270-2 Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Tape & Reel (TR), Digi-Reel® |
201 In Stock |
|
$37.2093 / $45.9300 | Buy Now |
|
DISTI #
20164491
|
Verical | Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R Min Qty: 2 Package Multiple: 1 | Americas - 6 |
|
$42.3500 | Buy Now |
|
|
Rochester Electronics | MRF6S20010 - GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V RoHS: Compliant Status: Obsolete Min Qty: 1 | 8300 |
|
$34.6400 / $40.7600 | Buy Now |
|
DISTI #
MRF6S20010GNR1
|
Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 6 |
|
RFQ | |
|
|
Chip1Cloud | FET RF 68V 2.17GHZ TO270-2 GW / Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R | 9000 |
|
RFQ |
Part Details for MRF6S20010GNR1
MRF6S20010GNR1 CAD Models
MRF6S20010GNR1 Part Data Attributes
|
|
MRF6S20010GNR1
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
MRF6S20010GNR1
NXP Semiconductors
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270BA
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | ROHS COMPLIANT, PLASTIC, CASE 1265A-03, GULL, 2 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Samacsys Manufacturer | NXP | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 68 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JEDEC-95 Code | TO-270BA | |
| JESD-30 Code | R-PDFM-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MRF6S20010GNR1
This table gives cross-reference parts and alternative options found for MRF6S20010GNR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF6S20010GNR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MRF6S20010GNR1 | GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V | Freescale Semiconductor | MRF6S20010GNR1 vs MRF6S20010GNR1 |
| MRF6S20010NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA | NXP Semiconductors | MRF6S20010GNR1 vs MRF6S20010NR1 |
| MRF21010LSR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360S, CASE 360C-05, 2 PIN | Motorola Mobility LLC | MRF6S20010GNR1 vs MRF21010LSR1 |
| MRF21010SR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN | Freescale Semiconductor | MRF6S20010GNR1 vs MRF21010SR1 |
| MRF21010R1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 3 PIN | Motorola Mobility LLC | MRF6S20010GNR1 vs MRF21010R1 |
| MRF21010 | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 360B-05, 3 PIN | Motorola Semiconductor Products | MRF6S20010GNR1 vs MRF21010 |
| MRF6S20010NR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA, ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN | Freescale Semiconductor | MRF6S20010GNR1 vs MRF6S20010NR1 |
| MRF21010LR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 2 PIN | Motorola Mobility LLC | MRF6S20010GNR1 vs MRF21010LR1 |
| MRF21010SR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN | Motorola Mobility LLC | MRF6S20010GNR1 vs MRF21010SR1 |
| MRF21010LR1 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN | Freescale Semiconductor | MRF6S20010GNR1 vs MRF21010LR1 |