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Transistors Power Bipolar Transistors MJD3055

MJD3055
Description: 10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE

Overview of MJD3055 by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for MJD3055 by onsemi

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1510
RFQ
Bristol Electronics   75
RFQ
Quest Components 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252 1208
  • 1 $0.9000
  • 112 $0.4500
  • 445 $0.3600
$0.3600 / $0.9000 Buy Now

CAD Models for MJD3055 by onsemi
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Part Data Attributes for MJD3055 by onsemi
Parametric Data

MJD3055
onsemi
Buy Now
-
-
Pbfree Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ONSEMI
Part Package Code
DPAK (SINGLE GAUGE) TO-252
Package Description
PLASTIC, CASE 369C-01, DPAK-3
Pin Count
3
Manufacturer Package Code
369C
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Samacsys Manufacturer
onsemi
Case Connection
COLLECTOR
Collector Current-Max (IC)
10 A
Collector-Emitter Voltage-Max
60 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
5
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
140 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
235
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
20 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
2 MHz
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  1. MJD3055
    onsemi
    10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
    VS

Alternate Parts for MJD3055

This table gives cross-reference parts and alternative options found for MJD3055. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD3055, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MJD3055T4 10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi MJD3055 vs MJD3055T4
MJD3055T4G 10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi MJD3055 vs MJD3055T4G
MJD3055 10A, 60V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 STMicroelectronics MJD3055 vs MJD3055
MJD3055T4 Low voltage NPN power transistor STMicroelectronics MJD3055 vs MJD3055T4
Part Number Description Manufacturer Compare
MJD3055 10A, 60V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 STMicroelectronics MJD3055 vs MJD3055
MJD30-1 Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Samsung Semiconductor MJD3055 vs MJD30-1
KSH30-TF Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin Samsung Semiconductor MJD3055 vs KSH30-TF
KSH3055-TF Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin Samsung Semiconductor MJD3055 vs KSH3055-TF
MJD3055T4G 10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi MJD3055 vs MJD3055T4G
KSH3055 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation MJD3055 vs KSH3055
MJD30C-T1 Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Samsung Semiconductor MJD3055 vs MJD30C-T1
MJD3055T4 10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi MJD3055 vs MJD3055T4
MJD3055-T1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Samsung Semiconductor MJD3055 vs MJD3055-T1
MJD30C-1 Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Samsung Semiconductor MJD3055 vs MJD30C-1

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