MJD30-1
Samsung Semiconductor
Description: Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

Overview of MJD30-1 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Automotive

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Part Data Attributes for MJD30-1 by Samsung Semiconductor

MJD30-1
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Package Description
IN-LINE, R-PSIP-T3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Collector Current-Max (IC)
1 A
Collector-Emitter Voltage-Max
40 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
15
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
PNP
Power Dissipation Ambient-Max
15 W
Power Dissipation-Max (Abs)
15 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
3 MHz
VCEsat-Max
0.7 V
Want to compare parts?
  1. MJD30-1
    Samsung Semiconductor
    Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
    VS

Alternate Parts for MJD30-1

This table gives cross-reference parts and alternative options found for MJD30-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD30-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MJD32-1 3A, 40V, PNP, Si, POWER TRANSISTOR Motorola Mobility LLC MJD30-1 vs MJD32-1
Part Number Description Manufacturer Compare
MJD3055T4G 10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi MJD30-1 vs MJD3055T4G
MJD3055-T1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Samsung Semiconductor MJD30-1 vs MJD3055-T1
MJD3055T4 10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi MJD30-1 vs MJD3055T4
MJD30-T1 Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Samsung Semiconductor MJD30-1 vs MJD30-T1
MJD30C-1 Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 Samsung Semiconductor MJD30-1 vs MJD30C-1
MJD3055-1 10A, 60V, NPN, Si, POWER TRANSISTOR, CASE 369-07, 3 PIN onsemi MJD30-1 vs MJD3055-1
MJD3055 10A, 60V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 STMicroelectronics MJD30-1 vs MJD3055
MJD3055 10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi MJD30-1 vs MJD3055

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