Part Details for M470L3324BT0-CB3 by Samsung Semiconductor
Overview of M470L3324BT0-CB3 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Computing and Data Storage
Part Details for M470L3324BT0-CB3
M470L3324BT0-CB3 CAD Models
M470L3324BT0-CB3 Part Data Attributes
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M470L3324BT0-CB3
Samsung Semiconductor
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Datasheet
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M470L3324BT0-CB3
Samsung Semiconductor
DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | SODIMM | |
| Package Description | DIMM, DIMM200,24 | |
| Pin Count | 200 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XZMA-N200 | |
| JESD-609 Code | e0 | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 200 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM200,24 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Supply Current-Max | 1.62 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.6 mm | |
| Terminal Position | ZIG-ZAG |
Alternate Parts for M470L3324BT0-CB3
This table gives cross-reference parts and alternative options found for M470L3324BT0-CB3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M470L3324BT0-CB3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYMD232M646A8-J | DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | M470L3324BT0-CB3 vs HYMD232M646A8-J |
| HYMD232M646DL8-J | DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | M470L3324BT0-CB3 vs HYMD232M646DL8-J |
| HYMD232M646AL8-J | DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | M470L3324BT0-CB3 vs HYMD232M646AL8-J |
| M470L3223DT0-CB3 | DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200 | Samsung Semiconductor | M470L3324BT0-CB3 vs M470L3223DT0-CB3 |
| M470L3324DU0-CB3 | DDR DRAM Module, 32MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | M470L3324BT0-CB3 vs M470L3324DU0-CB3 |
| HYMD532M646CL6-J | DDR DRAM Module, 32MX64, 0.7ns, CMOS, PDMA200 | SK Hynix Inc | M470L3324BT0-CB3 vs HYMD532M646CL6-J |
| HYMD532M646C6-J | DDR DRAM Module, 32MX64, 0.7ns, CMOS, PDMA200 | SK Hynix Inc | M470L3324BT0-CB3 vs HYMD532M646C6-J |
| HYMD532M646AL6-J | DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | M470L3324BT0-CB3 vs HYMD532M646AL6-J |
| M470L3324CU0-CB3 | DDR DRAM Module, 32MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | M470L3324BT0-CB3 vs M470L3324CU0-CB3 |
| NT256D64SH4B0FM-6K | DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200 | Nanya Technology Corporation | M470L3324BT0-CB3 vs NT256D64SH4B0FM-6K |