Datasheets
M368L2923BTN-CB3 by: Samsung Semiconductor

DDR DRAM Module, 128MX64, 0.7ns, CMOS, DIMM-184

Part Details for M368L2923BTN-CB3 by Samsung Semiconductor

Overview of M368L2923BTN-CB3 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Part Details for M368L2923BTN-CB3

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M368L2923BTN-CB3 Part Data Attributes:

M368L2923BTN-CB3 Samsung Semiconductor
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M368L2923BTN-CB3 Samsung Semiconductor DDR DRAM Module, 128MX64, 0.7ns, CMOS, DIMM-184
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM
Package Description DIMM, DIMM184
Pin Count 184
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N184
Memory Density 8589934592 bit
Memory IC Type DDR DRAM MODULE
Memory Width 64
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 184
Number of Words 134217728 words
Number of Words Code 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 128MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM184
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 8192
Self Refresh YES
Standby Current-Max 0.08 A
Supply Current-Max 3.6 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL

Alternate Parts for M368L2923BTN-CB3

This table gives cross-reference parts and alternative options found for M368L2923BTN-CB3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M368L2923BTN-CB3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
M368L2923BTN-LB3 DDR DRAM Module, 128MX64, 0.7ns, CMOS, DIMM-184 Samsung Semiconductor M368L2923BTN-CB3 vs M368L2923BTN-LB3
M368L2923BUN-LB3 DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 Samsung Semiconductor M368L2923BTN-CB3 vs M368L2923BUN-LB3
M368L2923BUN-CB3 DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 Samsung Semiconductor M368L2923BTN-CB3 vs M368L2923BUN-CB3
V826765K24SAIW-C0 DDR DRAM Module, 128MX64, 0.75ns, CMOS, GREEN, DIMM-184 ProMOS Technologies Inc M368L2923BTN-CB3 vs V826765K24SAIW-C0
M368L2923FLN-CB3 DDR DRAM Module, 128MX64, 0.7ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, DIMM-184 Samsung Semiconductor M368L2923BTN-CB3 vs M368L2923FLN-CB3
Part Number Description Manufacturer Compare
W3EG64128S202D3M DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Microsemi Corporation M368L2923BTN-CB3 vs W3EG64128S202D3M
M368L2923CUN-CA2 DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M368L2923BTN-CB3 vs M368L2923CUN-CA2
W3EG64128S262D3SG DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation M368L2923BTN-CB3 vs W3EG64128S262D3SG
EBD11UD8ADFB-5B-E DDR DRAM Module, 128MX64, 0.7ns, CMOS, DIMM-184 Elpida Memory Inc M368L2923BTN-CB3 vs EBD11UD8ADFB-5B-E
HYMD512646A8-H DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 SK Hynix Inc M368L2923BTN-CB3 vs HYMD512646A8-H
V826765K24SAIW-C0 DDR DRAM Module, 128MX64, 0.75ns, CMOS, GREEN, DIMM-184 ProMOS Technologies Inc M368L2923BTN-CB3 vs V826765K24SAIW-C0
W3EG64129S202D3 DDR DRAM Module, 128MX64, CMOS, DIMM-184 Microsemi Corporation M368L2923BTN-CB3 vs W3EG64129S202D3
M368L2923BTN-CA2 DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M368L2923BTN-CB3 vs M368L2923BTN-CA2
W3EG64128S202D3SG DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation M368L2923BTN-CB3 vs W3EG64128S202D3SG
HYS64D128320GU-6-A DDR DRAM Module, 128MX64, 0.7ns, CMOS, DIMM-184 Infineon Technologies AG M368L2923BTN-CB3 vs HYS64D128320GU-6-A

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