M368L2923BTN-CB3 vs W3EG64128S262D3SG feature comparison

M368L2923BTN-CB3 Samsung Semiconductor

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W3EG64128S262D3SG Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICROSEMI CORP
Part Package Code DIMM DIMM
Package Description DIMM, DIMM184 DIMM,
Pin Count 184 184
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode FOUR BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 0.7 ns 0.75 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N184 R-XDMA-N184
Memory Density 8589934592 bit 8589934592 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 184 184
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 128MX64 128MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM184
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Self Refresh YES YES
Standby Current-Max 0.08 A
Supply Current-Max 3.6 mA
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare M368L2923BTN-CB3 with alternatives

Compare W3EG64128S262D3SG with alternatives