M312L5620AUS-CB3 vs MT18VDDT25672DG-26AXX feature comparison

M312L5620AUS-CB3 Samsung Semiconductor

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MT18VDDT25672DG-26AXX Micron Technology Inc

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Part Package Code DIMM DIMM
Package Description DIMM, DIMM184 DIMM-184
Pin Count 184 184
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode SINGLE BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 0.7 ns 0.75 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N184 R-XDMA-N184
Memory Density 19327352832 bit 19327352832 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 72 72
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 184 184
Number of Words 268435456 words 268435456 words
Number of Words Code 256000000 256000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 256MX72 256MX72
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM184
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) NOT SPECIFIED 235
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Self Refresh YES YES
Standby Current-Max 0.65 A
Supply Current-Max 6.69 mA
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 1
Pbfree Code No

Compare M312L5620AUS-CB3 with alternatives

Compare MT18VDDT25672DG-26AXX with alternatives