Part Details for LBSS138LT3G by LRC Leshan Radio Co Ltd
Overview of LBSS138LT3G by LRC Leshan Radio Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for LBSS138LT3G
LBSS138LT3G CAD Models
LBSS138LT3G Part Data Attributes:
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LBSS138LT3G
LRC Leshan Radio Co Ltd
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Datasheet
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LBSS138LT3G
LRC Leshan Radio Co Ltd
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LESHAN RADIO CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 3.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.225 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for LBSS138LT3G
This table gives cross-reference parts and alternative options found for LBSS138LT3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBSS138LT3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSS138-13 | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Diodes Incorporated | LBSS138LT3G vs BSS138-13 |
BSS138D87Z | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | LBSS138LT3G vs BSS138D87Z |
BSS138/D87Z | TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | LBSS138LT3G vs BSS138/D87Z |
BSS138LT1G | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | onsemi | LBSS138LT3G vs BSS138LT1G |
BSS138LT1 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | onsemi | LBSS138LT3G vs BSS138LT1 |
S-LBSS138LT1G | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3 | LRC Leshan Radio Co Ltd | LBSS138LT3G vs S-LBSS138LT1G |
BSS138LT3 | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL | onsemi | LBSS138LT3G vs BSS138LT3 |
BSS138/L99Z | 220mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Texas Instruments | LBSS138LT3G vs BSS138/L99Z |
BVSS138LT3G | Small Signal Field-Effect Transistor | onsemi | LBSS138LT3G vs BVSS138LT3G |
BSS138E6327 | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Infineon Technologies AG | LBSS138LT3G vs BSS138E6327 |