Datasheets
LBSS138LT3G by: LRC Leshan Radio Co Ltd

Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3

Part Details for LBSS138LT3G by LRC Leshan Radio Co Ltd

Overview of LBSS138LT3G by LRC Leshan Radio Co Ltd

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Part Details for LBSS138LT3G

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LBSS138LT3G Part Data Attributes:

LBSS138LT3G LRC Leshan Radio Co Ltd
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LBSS138LT3G LRC Leshan Radio Co Ltd Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LESHAN RADIO CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.225 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for LBSS138LT3G

This table gives cross-reference parts and alternative options found for LBSS138LT3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBSS138LT3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSS138-13 Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 Diodes Incorporated LBSS138LT3G vs BSS138-13
BSS138D87Z Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fairchild Semiconductor Corporation LBSS138LT3G vs BSS138D87Z
BSS138/D87Z TRANSISTOR 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal National Semiconductor Corporation LBSS138LT3G vs BSS138/D87Z
BSS138LT1G Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi LBSS138LT3G vs BSS138LT1G
BSS138LT1 Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi LBSS138LT3G vs BSS138LT1
S-LBSS138LT1G Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3 LRC Leshan Radio Co Ltd LBSS138LT3G vs S-LBSS138LT1G
BSS138LT3 Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL onsemi LBSS138LT3G vs BSS138LT3
BSS138/L99Z 220mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments LBSS138LT3G vs BSS138/L99Z
BVSS138LT3G Small Signal Field-Effect Transistor onsemi LBSS138LT3G vs BVSS138LT3G
BSS138E6327 Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Infineon Technologies AG LBSS138LT3G vs BSS138E6327
Part Number Description Manufacturer Compare
RK7002BT116 Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SST3, 3 PIN ROHM Semiconductor LBSS138LT3G vs RK7002BT116
BSS138TC Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Zetex / Diodes Inc LBSS138LT3G vs BSS138TC
BSS138-13 Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 Diodes Incorporated LBSS138LT3G vs BSS138-13
RK7002BMHZGT116 Small Signal Field-Effect Transistor, ROHM Semiconductor LBSS138LT3G vs RK7002BMHZGT116
BSS138-TAPE-7 TRANSISTOR 200 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors LBSS138LT3G vs BSS138-TAPE-7
BSS138LT3 Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL onsemi LBSS138LT3G vs BSS138LT3
BSS138-7-F Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 SPC Multicomp LBSS138LT3G vs BSS138-7-F
UBSS138TC Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Diodes Incorporated LBSS138LT3G vs UBSS138TC
BSS138K Small Signal Field-Effect Transistor Jiangsu Changjiang Electronics Technology Co Ltd LBSS138LT3G vs BSS138K
BSS138DW-13 Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-6 Diodes Incorporated LBSS138LT3G vs BSS138DW-13

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