Datasheets
KM432S2030CT-G10 by: Samsung Semiconductor

Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

Part Details for KM432S2030CT-G10 by Samsung Semiconductor

Overview of KM432S2030CT-G10 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Available Datasheets

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Price & Stock for KM432S2030CT-G10

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 2 192
  • 2 $2.8000
  • 10 $1.8200
  • 29 $1.4000
  • 91 $1.3068
$1.3068 / $2.8000 Buy Now
Quest Components SDRAM, 2M x 32, 86 Pin, Plastic, TSSOP 153
  • 1 $3.7500
  • 11 $1.8750
  • 108 $1.7500
$1.7500 / $3.7500 Buy Now
Quest Components SDRAM, 2M x 32, 86 Pin, Plastic, TSSOP 33
  • 1 $3.7500
  • 4 $2.5000
  • 11 $1.8750
$1.8750 / $3.7500 Buy Now

Part Details for KM432S2030CT-G10

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KM432S2030CT-G10 Part Data Attributes

KM432S2030CT-G10 Samsung Semiconductor
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KM432S2030CT-G10 Samsung Semiconductor Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Pin Count 86
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G86
JESD-609 Code e0
Length 22.22 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 86
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP86,.46,20
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 2048
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.15 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.5 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for KM432S2030CT-G10

This table gives cross-reference parts and alternative options found for KM432S2030CT-G10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM432S2030CT-G10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
KM432S2030CT-F10 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor KM432S2030CT-G10 vs KM432S2030CT-F10
Part Number Description Manufacturer Compare
K4S643232E-TC55 Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor KM432S2030CT-G10 vs K4S643232E-TC55
HY57V643220DLTP-45I Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc KM432S2030CT-G10 vs HY57V643220DLTP-45I
K4S643232C-TC10 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor KM432S2030CT-G10 vs K4S643232C-TC10
IS42S32200-7T Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 Integrated Silicon Solution Inc KM432S2030CT-G10 vs IS42S32200-7T
MT48LC2M32B2TG-55AAT:G Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, TSOP2-86 Micron Technology Inc KM432S2030CT-G10 vs MT48LC2M32B2TG-55AAT:G
KM432S2020BT-GL Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor KM432S2030CT-G10 vs KM432S2020BT-GL
MB811643222A-100FN Synchronous DRAM, 2MX32, MOS, PDSO86, 0.400 INCH, 0.50 MM PITCH, TSOP2-86 FUJITSU Semiconductor Limited KM432S2030CT-G10 vs MB811643222A-100FN
MB811643242A-84LFN Synchronous DRAM, 2MX32, 8.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 FUJITSU Limited KM432S2030CT-G10 vs MB811643242A-84LFN
V54C365324V-8 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 Mosel Vitelic Corporation KM432S2030CT-G10 vs V54C365324V-8
VG36643212BT-8 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86 Vanguard International Semiconductor Corporation KM432S2030CT-G10 vs VG36643212BT-8

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