Part Details for KM416V4104CS-6 by Samsung Semiconductor
Overview of KM416V4104CS-6 by Samsung Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Price & Stock for KM416V4104CS-6
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2 |
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RFQ | ||
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Quest Components | 4M X 16 EDO DRAM, 60 ns, PDSO50 | 9 |
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$2.7000 / $5.4000 | Buy Now |
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Quest Components | 4M X 16 EDO DRAM, 60 ns, PDSO50 | 1 |
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$5.4000 | Buy Now |
Part Details for KM416V4104CS-6
KM416V4104CS-6 CAD Models
KM416V4104CS-6 Part Data Attributes
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KM416V4104CS-6
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
KM416V4104CS-6
Samsung Semiconductor
EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP50,.46,32 | |
| Pin Count | 50 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FAST PAGE WITH EDO | |
| Access Time-Max | 60 ns | |
| Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDSO-G50 | |
| JESD-609 Code | e0 | |
| Length | 20.95 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | EDO DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP50,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | NO | |
| Standby Current-Max | 0.0005 A | |
| Supply Current-Max | 0.11 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for KM416V4104CS-6
This table gives cross-reference parts and alternative options found for KM416V4104CS-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM416V4104CS-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYB3166165BT-60 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Infineon Technologies AG | KM416V4104CS-6 vs HYB3166165BT-60 |
| K4E661612E-TC60 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | KM416V4104CS-6 vs K4E661612E-TC60 |
| TC5164165AFT-60 | IC 4M X 16 EDO DRAM, 60 ns, PDSO50, 0.400 INCH, PLASTIC, TSOP-50, Dynamic RAM | Toshiba America Electronic Components | KM416V4104CS-6 vs TC5164165AFT-60 |
| KM416V4104CT-6 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | KM416V4104CS-6 vs KM416V4104CT-6 |
| HYB3166165BTL-60 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Siemens | KM416V4104CS-6 vs HYB3166165BTL-60 |
| HYB3166165BT-60 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Siemens | KM416V4104CS-6 vs HYB3166165BT-60 |
| KM416V4004CS-L6 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | KM416V4104CS-6 vs KM416V4004CS-L6 |
| TMS465169-60DGE | 4MX16 EDO DRAM, 60ns, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 | Texas Instruments | KM416V4104CS-6 vs TMS465169-60DGE |
| GM71VS65163CLT-6 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | KM416V4104CS-6 vs GM71VS65163CLT-6 |
| HY51V64164LTC-60 | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | KM416V4104CS-6 vs HY51V64164LTC-60 |