Memory
KM416S8030BT-FL0
Samsung Semiconductor
Description: Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

Overview of KM416S8030BT-FL0 by Samsung Semiconductor

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Part Data Attributes for KM416S8030BT-FL0 by Samsung Semiconductor

KM416S8030BT-FL0
Samsung Semiconductor
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
TSOP2,
Pin Count
54
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
6 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PDSO-G54
Length
22.22 mm
Memory Density
134217728 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
8MX16
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. KM416S8030BT-FL0
    Samsung Semiconductor
    Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
    VS

Alternate Parts for KM416S8030BT-FL0

This table gives cross-reference parts and alternative options found for KM416S8030BT-FL0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM416S8030BT-FL0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT48LC8M16A2TG-8ELIT:G Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc KM416S8030BT-FL0 vs MT48LC8M16A2TG-8ELIT:G
HY57V281620HCLTP-8 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc KM416S8030BT-FL0 vs HY57V281620HCLTP-8
IBM0312164CT3B-260 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 IBM KM416S8030BT-FL0 vs IBM0312164CT3B-260
K4S281632B-TL800 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor KM416S8030BT-FL0 vs K4S281632B-TL800
MT48LC8M16A2P-8ELIT:G Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Micron Technology Inc KM416S8030BT-FL0 vs MT48LC8M16A2P-8ELIT:G
HYB39S128160DTL-8 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG KM416S8030BT-FL0 vs HYB39S128160DTL-8
KM416S8030TA-G/FL Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor KM416S8030BT-FL0 vs KM416S8030TA-G/FL
K4S281632C-TC1H0 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor KM416S8030BT-FL0 vs K4S281632C-TC1H0
K4S281632D-TL1H0 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor KM416S8030BT-FL0 vs K4S281632D-TL1H0
UPD45128163G5-A10T-9JF Synchronous DRAM, 8MX16, 6ns, MOS, PDSO54, PLASTIC, TSOP2-54 Elpida Memory Inc KM416S8030BT-FL0 vs UPD45128163G5-A10T-9JF
Part Number Description Manufacturer Compare
HY57Y281620HCLT-P Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc KM416S8030BT-FL0 vs HY57Y281620HCLT-P
KM416S8030BN-FL Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 Samsung Semiconductor KM416S8030BT-FL0 vs KM416S8030BN-FL
V54C3128404VCUI75EPC Synchronous DRAM, 32MX4, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc KM416S8030BT-FL0 vs V54C3128404VCUI75EPC
HY57V281620BT-S Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 SK Hynix Inc KM416S8030BT-FL0 vs HY57V281620BT-S
IS42SM16800E-5TLI Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc KM416S8030BT-FL0 vs IS42SM16800E-5TLI
V54C3128404VCI7E Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc KM416S8030BT-FL0 vs V54C3128404VCI7E
TC59SM716ASL-80 IC 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.40 MM PITCH. PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components KM416S8030BT-FL0 vs TC59SM716ASL-80
K4S281632C-TC750 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor KM416S8030BT-FL0 vs K4S281632C-TC750
MT48LC8M16A2TG-75IT Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc KM416S8030BT-FL0 vs MT48LC8M16A2TG-75IT
W981216AH-75 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Winbond Electronics Corp KM416S8030BT-FL0 vs W981216AH-75

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