Datasheets
K4W2G1646C-HC120 by: Samsung Semiconductor

DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96

Part Details for K4W2G1646C-HC120 by Samsung Semiconductor

Overview of K4W2G1646C-HC120 by Samsung Semiconductor

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Applications Consumer Electronics Education and Research Computing and Data Storage

Part Details for K4W2G1646C-HC120

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K4W2G1646C-HC120 Part Data Attributes

K4W2G1646C-HC120 Samsung Semiconductor
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K4W2G1646C-HC120 Samsung Semiconductor DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description TFBGA,
Pin Count 96
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.255 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B96
Length 13.3 mm
Memory Density 2147483648 bit
Memory IC Type DDR DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 134217728 words
Number of Words Code 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min
Organization 128MX16
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 7.5 mm

Alternate Parts for K4W2G1646C-HC120

This table gives cross-reference parts and alternative options found for K4W2G1646C-HC120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4W2G1646C-HC120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4W2G1646C-HC150 DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Samsung Semiconductor K4W2G1646C-HC120 vs K4W2G1646C-HC150
Part Number Description Manufacturer Compare
MT41J128M16HA-15EIT:D DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, 9 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc K4W2G1646C-HC120 vs MT41J128M16HA-15EIT:D
H5TQ2G63FFR-TEL DDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96, FBGA-96 SK Hynix Inc K4W2G1646C-HC120 vs H5TQ2G63FFR-TEL
H5TQ2G63DFR-H9I DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc K4W2G1646C-HC120 vs H5TQ2G63DFR-H9I
K4B2G1646B-HPH90 DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Samsung Semiconductor K4W2G1646C-HC120 vs K4B2G1646B-HPH90
NT5CC128M16BP-BE DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-96 Nanya Technology Corporation K4W2G1646C-HC120 vs NT5CC128M16BP-BE
EDJ2116EEBG-DJ-F DDR DRAM, 128MX16, 20ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Elpida Memory Inc K4W2G1646C-HC120 vs EDJ2116EEBG-DJ-F
H5TQ2G63DFR-H9C DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc K4W2G1646C-HC120 vs H5TQ2G63DFR-H9C
IS43TR16128A-187FBL DDR DRAM, 128MX16, 13.125ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96 Integrated Silicon Solution Inc K4W2G1646C-HC120 vs IS43TR16128A-187FBL
NT5CB128M16BP-AD DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA96, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-96 Nanya Technology Corporation K4W2G1646C-HC120 vs NT5CB128M16BP-AD
H5TQ2G63BFR-N0C DDR DRAM, 2GX1, 0.18ns, CMOS, PBGA96, ROHS COMPLIANT, FBGA-96 SK Hynix Inc K4W2G1646C-HC120 vs H5TQ2G63BFR-N0C

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