K4W2G1646C-HC120
vs
H5TQ2G63DFR-H9I
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SK HYNIX INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
TFBGA,
|
TFBGA, BGA96,9X16,32
|
| Pin Count |
96
|
96
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.36
|
8542.32.00.36
|
| Access Mode |
MULTI BANK PAGE BURST
|
MULTI BANK PAGE BURST
|
| Access Time-Max |
0.255 ns
|
0.255 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
R-PBGA-B96
|
R-PBGA-B96
|
| Length |
13.3 mm
|
13 mm
|
| Memory Density |
2147483648 bit
|
2147483648 bit
|
| Memory IC Type |
DDR DRAM
|
DDR3 DRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
96
|
96
|
| Number of Words |
134217728 words
|
134217728 words
|
| Number of Words Code |
128000000
|
128000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
95 °C
|
95 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
128MX16
|
128MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
TFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
1.575 V
|
1.575 V
|
| Supply Voltage-Min (Vsup) |
1.425 V
|
1.425 V
|
| Supply Voltage-Nom (Vsup) |
1.5 V
|
1.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
OTHER
|
INDUSTRIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
7.5 mm
|
7.5 mm
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Clock Frequency-Max (fCLK) |
|
667 MHz
|
| I/O Type |
|
COMMON
|
| Interleaved Burst Length |
|
4,8
|
| Output Characteristics |
|
3-STATE
|
| Package Equivalence Code |
|
BGA96,9X16,32
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Refresh Cycles |
|
8192
|
| Sequential Burst Length |
|
4,8
|
| Standby Current-Max |
|
0.012 A
|
| Supply Current-Max |
|
0.225 mA
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare K4W2G1646C-HC120 with alternatives
Compare H5TQ2G63DFR-H9I with alternatives