Part Details for K4T1G164QF-BIE6T by Samsung Semiconductor
Overview of K4T1G164QF-BIE6T by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for K4T1G164QF-BIE6T
K4T1G164QF-BIE6T CAD Models
K4T1G164QF-BIE6T Part Data Attributes
|
K4T1G164QF-BIE6T
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
K4T1G164QF-BIE6T
Samsung Semiconductor
DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Package Description | FBGA, BGA84,9X15,32 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Time-Max | 0.45 ns | |
Clock Frequency-Max (fCLK) | 333 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B84 | |
Memory Density | 1073741824 bit | |
Memory IC Type | DDR2 DRAM | |
Memory Width | 16 | |
Number of Terminals | 84 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Organization | 64MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | FBGA | |
Package Equivalence Code | BGA84,9X15,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, FINE PITCH | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Sequential Burst Length | 4,8 | |
Standby Current-Max | 0.01 A | |
Supply Current-Max | 0.165 mA | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM |
Alternate Parts for K4T1G164QF-BIE6T
This table gives cross-reference parts and alternative options found for K4T1G164QF-BIE6T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4T1G164QF-BIE6T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K4T1G164QE-HIE6 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84 | Samsung Semiconductor | K4T1G164QF-BIE6T vs K4T1G164QE-HIE6 |
W971GG6JB-3 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 | Winbond Electronics Corp | K4T1G164QF-BIE6T vs W971GG6JB-3 |
HYB18T1G160CF-3 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Qimonda AG | K4T1G164QF-BIE6T vs HYB18T1G160CF-3 |
K4T1G164QE-HCE60 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | K4T1G164QF-BIE6T vs K4T1G164QE-HCE60 |
K4T1G164QF-BIE60 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | K4T1G164QF-BIE6T vs K4T1G164QF-BIE60 |
K4T1G164QE-HCE6 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | K4T1G164QF-BIE6T vs K4T1G164QE-HCE6 |