Part Details for K4T1G084QF-BIE60 by Samsung Semiconductor
Overview of K4T1G084QF-BIE60 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4T1G084QF-BIE60
K4T1G084QF-BIE60 CAD Models
K4T1G084QF-BIE60 Part Data Attributes
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K4T1G084QF-BIE60
Samsung Semiconductor
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Datasheet
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K4T1G084QF-BIE60
Samsung Semiconductor
DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | TFBGA, BGA60,9X11,32 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| Length | 9.5 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Organization | 128MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA60,9X11,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Supply Current-Max | 0.145 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 7.5 mm |
Alternate Parts for K4T1G084QF-BIE60
This table gives cross-reference parts and alternative options found for K4T1G084QF-BIE60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4T1G084QF-BIE60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT47H128M8HQ-3LIT:E | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | K4T1G084QF-BIE60 vs MT47H128M8HQ-3LIT:E |
| K4T1G084QD-ZCE60 | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, FBGA-60 | Samsung Semiconductor | K4T1G084QF-BIE60 vs K4T1G084QD-ZCE60 |
| K4T1G084QF-BIE6 | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60 | Samsung Semiconductor | K4T1G084QF-BIE60 vs K4T1G084QF-BIE6 |
| K4T1G084QC-ZLE6 | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60 | Samsung Semiconductor | K4T1G084QF-BIE60 vs K4T1G084QC-ZLE6 |
| HYI18T1G800C2C-3 | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, PLASTIC, TFBGA-60 | Qimonda AG | K4T1G084QF-BIE60 vs HYI18T1G800C2C-3 |
| MT47H128M8HQ-3EL:E | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | K4T1G084QF-BIE60 vs MT47H128M8HQ-3EL:E |
| K4T1G084QE-HLE6 | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4T1G084QF-BIE60 vs K4T1G084QE-HLE6 |
| MT47H128M8HV-3LIT:E | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 | Micron Technology Inc | K4T1G084QF-BIE60 vs MT47H128M8HV-3LIT:E |
| MT47H128M8CF-3AT:H | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | K4T1G084QF-BIE60 vs MT47H128M8CF-3AT:H |
| MT47H128M8JN-3IT:H | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 | Micron Technology Inc | K4T1G084QF-BIE60 vs MT47H128M8JN-3IT:H |