Part Details for K4T1G084QE-HLE7 by Samsung Semiconductor
Overview of K4T1G084QE-HLE7 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4T1G084QE-HLE7
K4T1G084QE-HLE7 CAD Models
K4T1G084QE-HLE7 Part Data Attributes
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K4T1G084QE-HLE7
Samsung Semiconductor
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Datasheet
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K4T1G084QE-HLE7
Samsung Semiconductor
DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | TFBGA, BGA60,9X11,32 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e3 | |
| Length | 9.5 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA60,9X11,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Supply Current-Max | 0.17 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 7.5 mm |
Alternate Parts for K4T1G084QE-HLE7
This table gives cross-reference parts and alternative options found for K4T1G084QE-HLE7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4T1G084QE-HLE7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4T1G084QD-ZCE7T | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60 | Samsung Semiconductor | K4T1G084QE-HLE7 vs K4T1G084QD-ZCE7T |
| K4T1G084QF-BCE70 | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4T1G084QE-HLE7 vs K4T1G084QF-BCE70 |
| K4T1G084QD-ZCE7 | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, | Samsung Semiconductor | K4T1G084QE-HLE7 vs K4T1G084QD-ZCE7 |
| K4T1G084QD-ZLE70 | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | K4T1G084QE-HLE7 vs K4T1G084QD-ZLE70 |
| K4T1G084QF-BCE7 | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60 | Samsung Semiconductor | K4T1G084QE-HLE7 vs K4T1G084QF-BCE7 |
| K4T1G084QD-ZLE7 | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60 | Samsung Semiconductor | K4T1G084QE-HLE7 vs K4T1G084QD-ZLE7 |
| HYB18T1G800CF-25F | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 | Qimonda AG | K4T1G084QE-HLE7 vs HYB18T1G800CF-25F |
| NT5TU128M8DE-AC | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, GREEN, BGA-60 | Nanya Technology Corporation | K4T1G084QE-HLE7 vs NT5TU128M8DE-AC |
| HYB18TC1G800C2F-25F | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 | Qimonda AG | K4T1G084QE-HLE7 vs HYB18TC1G800C2F-25F |
| NT5TU128M8DE-ACI | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, GREEN, BGA-60 | Nanya Technology Corporation | K4T1G084QE-HLE7 vs NT5TU128M8DE-ACI |