K4T1G084QE-HLE7 vs K4T1G084QD-ZLE7 feature comparison

K4T1G084QE-HLE7 Samsung Semiconductor

Buy Now Datasheet

K4T1G084QD-ZLE7 Samsung Semiconductor

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Package Description TFBGA, BGA60,9X11,32 FBGA, BGA60,9X11,32
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.4 ns 0.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz 400 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 4,8 4,8
JESD-30 Code R-PBGA-B60 R-PBGA-B60
JESD-609 Code e3 e3
Length 9.5 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 8 8
Moisture Sensitivity Level 1 1
Number of Functions 1
Number of Ports 1
Number of Terminals 60 60
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 128MX8 128MX8
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA FBGA
Package Equivalence Code BGA60,9X11,32 BGA60,9X11,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8 4,8
Supply Current-Max 0.17 mA 0.265 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER
Terminal Finish MATTE TIN MATTE TIN
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 7.5 mm
Base Number Matches 3 3

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Compare K4T1G084QD-ZLE7 with alternatives