Memory
K4S56163PF-RF900
Samsung Semiconductor
Description: Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, FBGA-54

Overview of K4S56163PF-RF900 by Samsung Semiconductor

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Part Data Attributes for K4S56163PF-RF900 by Samsung Semiconductor

K4S56163PF-RF900
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
TFBGA,
Pin Count
54
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
7 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B54
Length
11 mm
Memory Density
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
16777216 words
Number of Words Code
16000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
-25 °C
Organization
16MX16
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.95 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
8 mm
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  1. K4S56163PF-RF900
    Samsung Semiconductor
    Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, FBGA-54
    VS

Alternate Parts for K4S56163PF-RF900

This table gives cross-reference parts and alternative options found for K4S56163PF-RF900. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S56163PF-RF900, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
EDS2516EEBH-9ATT-E Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, ROHS COMPLIANT, FBGA-54 Elpida Memory Inc K4S56163PF-RF900 vs EDS2516EEBH-9ATT-E
K4S56163PF-BF900 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor K4S56163PF-RF900 vs K4S56163PF-BF900
K4S56163PF-BG900 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor K4S56163PF-RF900 vs K4S56163PF-BG900
K4M56163PE-RF1L0 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, CSP-54 Samsung Semiconductor K4S56163PF-RF900 vs K4M56163PE-RF1L0
K4M56163PE-RG1L0 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, CSP-54 Samsung Semiconductor K4S56163PF-RF900 vs K4M56163PE-RG1L0
K4M56163PE-BG1L0 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, CSP-54 Samsung Semiconductor K4S56163PF-RF900 vs K4M56163PE-BG1L0
K4M56163PE-RF900 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, CSP-54 Samsung Semiconductor K4S56163PF-RF900 vs K4M56163PE-RF900
K4S56163PF-BF1L0 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor K4S56163PF-RF900 vs K4S56163PF-BF1L0
K4S56163PF-BG1L0 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor K4S56163PF-RF900 vs K4S56163PF-BG1L0
K4S56163PF-RG900 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, FBGA-54 Samsung Semiconductor K4S56163PF-RF900 vs K4S56163PF-RG900
Part Number Description Manufacturer Compare
K4M56163PG-RF900 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, FBGA-54 Samsung Semiconductor K4S56163PF-RF900 vs K4M56163PG-RF900
HY5S56ESFP-S Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54 SK Hynix Inc K4S56163PF-RF900 vs HY5S56ESFP-S
MT48H16M16LFB5-8L:G Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc K4S56163PF-RF900 vs MT48H16M16LFB5-8L:G
K4M56163PG-RF1L0 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, FBGA-54 Samsung Semiconductor K4S56163PF-RF900 vs K4M56163PG-RF1L0
K4M56163PG-BF1L0 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor K4S56163PF-RF900 vs K4M56163PG-BF1L0
HY5S5B6ELFP-SE Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54 SK Hynix Inc K4S56163PF-RF900 vs HY5S5B6ELFP-SE
HY5S5B6GLF-SE Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 MM X 10 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc K4S56163PF-RF900 vs HY5S5B6GLF-SE
MT48H16M16LFFG-8 Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 X 14 MM, VFBGA-54 Micron Technology Inc K4S56163PF-RF900 vs MT48H16M16LFFG-8
HY5S5A6DSF-SE Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc K4S56163PF-RF900 vs HY5S5A6DSF-SE
MT48H16M16LFB5-8LIT:G Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc K4S56163PF-RF900 vs MT48H16M16LFB5-8LIT:G

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