K4S56163PF-RF900 vs EDS2516EEBH-9ATT-E feature comparison

K4S56163PF-RF900 Samsung Semiconductor

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EDS2516EEBH-9ATT-E Elpida Memory Inc

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC ELPIDA MEMORY INC
Part Package Code BGA BGA
Package Description TFBGA, TFBGA,
Pin Count 54 54
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 7 ns 7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B54 R-PBGA-B54
Length 11 mm 11 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 54 54
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -25 °C -20 °C
Organization 16MX16 16MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.95 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER COMMERCIAL EXTENDED
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm 8 mm
Base Number Matches 1 1

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Compare EDS2516EEBH-9ATT-E with alternatives