Memory
K4S28323LF-FS1H0
Samsung Semiconductor
Description: Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90

Overview of K4S28323LF-FS1H0 by Samsung Semiconductor

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Where used in Applications: Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

CAD Models for K4S28323LF-FS1H0 by Samsung Semiconductor
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Part Data Attributes for K4S28323LF-FS1H0 by Samsung Semiconductor

K4S28323LF-FS1H0
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
TFBGA,
Pin Count
90
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
7 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B90
Length
13 mm
Memory Density
134217728 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-25 °C
Organization
4MX32
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
240
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
Width
8 mm
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  1. K4S28323LF-FS1H0
    Samsung Semiconductor
    Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90
    VS

Alternate Parts for K4S28323LF-FS1H0

This table gives cross-reference parts and alternative options found for K4S28323LF-FS1H0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S28323LF-FS1H0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4S28323LF-HN1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S28323LF-FS1H0 vs K4S28323LF-HN1H0
MT48V4M32LFF5-10ITES:G Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 Micron Technology Inc K4S28323LF-FS1H0 vs MT48V4M32LFF5-10ITES:G
MT48V4M32LFF5-10ES:G Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 Micron Technology Inc K4S28323LF-FS1H0 vs MT48V4M32LFF5-10ES:G
K4S28323LF-HN1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S28323LF-FS1H0 vs K4S28323LF-HN1L0
K4S28323LF-HE1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S28323LF-FS1H0 vs K4S28323LF-HE1L0
MT48V4M32LFB5-8XTES:G Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Micron Technology Inc K4S28323LF-FS1H0 vs MT48V4M32LFB5-8XTES:G
K4S28323LF-FN1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S28323LF-FS1H0 vs K4S28323LF-FN1H0
K4S28323LF-FL1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S28323LF-FS1H0 vs K4S28323LF-FL1H0
K4S28323LF-HC1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S28323LF-FS1H0 vs K4S28323LF-HC1H0
K4S28323LF-FR1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S28323LF-FS1H0 vs K4S28323LF-FR1L0
Part Number Description Manufacturer Compare
K4M56323LE-ML80 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S28323LF-FS1H0 vs K4M56323LE-ML80
IS42S32800G-75EBI Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 Integrated Silicon Solution Inc K4S28323LF-FS1H0 vs IS42S32800G-75EBI
MT46H8M32LFB5-75IT:A DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc K4S28323LF-FS1H0 vs MT46H8M32LFB5-75IT:A
MT48H8M32LFB5-75 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4S28323LF-FS1H0 vs MT48H8M32LFB5-75
HY57W2A3220T-SC Synchronous DRAM, 4MX32, 7ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc K4S28323LF-FS1H0 vs HY57W2A3220T-SC
MT48H8M32LFF5-8 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 Micron Technology Inc K4S28323LF-FS1H0 vs MT48H8M32LFF5-8
K4M56323LE-MN1L Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S28323LF-FS1H0 vs K4M56323LE-MN1L
K4S283233E-DG1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor K4S28323LF-FS1H0 vs K4S283233E-DG1H0
EDS1232JCBH-75-E Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 Elpida Memory Inc K4S28323LF-FS1H0 vs EDS1232JCBH-75-E
IS43LR32800D-6BL DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc K4S28323LF-FS1H0 vs IS43LR32800D-6BL

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