Memory
IS43LR32800D-6BL
Integrated Silicon Solution Inc
Description: DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90

Overview of IS43LR32800D-6BL by Integrated Silicon Solution Inc

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Part Data Attributes for IS43LR32800D-6BL by Integrated Silicon Solution Inc

IS43LR32800D-6BL
Integrated Silicon Solution Inc
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Part Package Code
DSBGA
Package Description
TFBGA,
Pin Count
90
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.5 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B90
JESD-609 Code
e1
Length
13 mm
Memory Density
268435456 bit
Memory IC Type
DDR DRAM
Memory Width
32
Moisture Sensitivity Level
3
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
8MX32
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
40
Width
8 mm
Want to compare parts?
  1. IS43LR32800D-6BL
    Integrated Silicon Solution Inc
    DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
    VS

Alternate Parts for IS43LR32800D-6BL

This table gives cross-reference parts and alternative options found for IS43LR32800D-6BL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43LR32800D-6BL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT46H8M32LFB5-6 DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc IS43LR32800D-6BL vs MT46H8M32LFB5-6
Part Number Description Manufacturer Compare
K4M56323LE-ML1H0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 Samsung Semiconductor IS43LR32800D-6BL vs K4M56323LE-ML1H0
HY5MS7B2LFP-H DDR DRAM, 8MX32, 6.5ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90 SK Hynix Inc IS43LR32800D-6BL vs HY5MS7B2LFP-H
HY5V52CLF-S Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc IS43LR32800D-6BL vs HY5V52CLF-S
MT46H8M32LGB5-75:H DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc IS43LR32800D-6BL vs MT46H8M32LGB5-75:H
IS42LS32400AL-7BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc IS43LR32800D-6BL vs IS42LS32400AL-7BL
MT46H8M32LFB5-6L:A DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc IS43LR32800D-6BL vs MT46H8M32LFB5-6L:A
K4S28323LE-SE1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor IS43LR32800D-6BL vs K4S28323LE-SE1H0
K4M56323LD-EP80 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS43LR32800D-6BL vs K4M56323LD-EP80
K4S283233E-HG1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor IS43LR32800D-6BL vs K4S283233E-HG1H0
K4S563233F-FG1L0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor IS43LR32800D-6BL vs K4S563233F-FG1L0

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