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Memory DRAMs K4S283233E-DN1L0

Memory
K4S283233E-DN1L0
Samsung Semiconductor
Description: Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90

Overview of K4S283233E-DN1L0 by Samsung Semiconductor

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Part Data Attributes for K4S283233E-DN1L0 by Samsung Semiconductor
Parametric Data

K4S283233E-DN1L0
Samsung Semiconductor
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
Package Description
LFBGA,
Pin Count
90
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
7 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B90
JESD-609 Code
e1
Length
13 mm
Memory Density
134217728 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Moisture Sensitivity Level
3
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-25 °C
Organization
4MX32
Package Body Material
PLASTIC/EPOXY
Package Code
LFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH
Qualification Status
Not Qualified
Seated Height-Max
1.45 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
Supply Voltage-Nom (Vsup)
3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
11 mm
Want to compare parts?
  1. K4S283233E-DN1L0
    Samsung Semiconductor
    Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90
    VS

Alternate Parts for K4S283233E-DN1L0

This table gives cross-reference parts and alternative options found for K4S283233E-DN1L0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S283233E-DN1L0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4S283233E-SN1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4S283233E-SN1H0
K4S283233E-DF1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4S283233E-DF1L0
K4S283233E-SG1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4S283233E-SG1L0
K4S283233E-SL1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4S283233E-SL1L0
K4S283233E-DG1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4S283233E-DG1L0
K4S283233E-DL1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4S283233E-DL1H0
K4S283233E-DF1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4S283233E-DF1H0
K4S283233E-SF1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4S283233E-SF1H0
K4S283233E-SE1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4S283233E-SE1L0
K4S283233E-DC1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4S283233E-DC1L0
Part Number Description Manufacturer Compare
MT48H8M32LFF5-8 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 Micron Technology Inc K4S283233E-DN1L0 vs MT48H8M32LFF5-8
HY57W2A3220T-SC Synchronous DRAM, 4MX32, 7ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc K4S283233E-DN1L0 vs HY57W2A3220T-SC
MT46H4M32LFB5-5AT:K DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc K4S283233E-DN1L0 vs MT46H4M32LFB5-5AT:K
K4M563233G-FL7L0 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4M563233G-FL7L0
K4S283233E-DG1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4S283233E-DG1L0
IS42LS32400AL-10BI Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Integrated Silicon Solution Inc K4S283233E-DN1L0 vs IS42LS32400AL-10BI
K4M56323PG-HF900 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor K4S283233E-DN1L0 vs K4M56323PG-HF900
EDD2532DGBH-7FTT-F DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, HALOGEN FREE AND ROHS COMPLIANT, FBGA-90 Elpida Memory Inc K4S283233E-DN1L0 vs EDD2532DGBH-7FTT-F
HY5V52AF-H Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.10 MM HEIGHT, 0.80 MM PITCH, FBGA-90 SK Hynix Inc K4S283233E-DN1L0 vs HY5V52AF-H
H5MS1222EFP-Q3E DDR DRAM, 4MX32, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90 SK Hynix Inc K4S283233E-DN1L0 vs H5MS1222EFP-Q3E

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