Part Details for K4M563233G-FL7L0 by Samsung Semiconductor
Overview of K4M563233G-FL7L0 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Part Details for K4M563233G-FL7L0
K4M563233G-FL7L0 CAD Models
K4M563233G-FL7L0 Part Data Attributes
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K4M563233G-FL7L0
Samsung Semiconductor
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Datasheet
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K4M563233G-FL7L0
Samsung Semiconductor
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | VFBGA, BGA90,9X15,32 | |
| Pin Count | 90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| Length | 13 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 8MX32 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 240 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.16 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Width | 8 mm |
Alternate Parts for K4M563233G-FL7L0
This table gives cross-reference parts and alternative options found for K4M563233G-FL7L0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4M563233G-FL7L0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4M563233G-HL7L | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | Samsung Semiconductor | K4M563233G-FL7L0 vs K4M563233G-HL7L |
| K4M563233G-HF7L0 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4M563233G-FL7L0 vs K4M563233G-HF7L0 |
| K4M563233G-HF7L | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | Samsung Semiconductor | K4M563233G-FL7L0 vs K4M563233G-HF7L |
| K4M563233G-FF7L0 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4M563233G-FL7L0 vs K4M563233G-FF7L0 |
| K4M563233G-FL7L | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | Samsung Semiconductor | K4M563233G-FL7L0 vs K4M563233G-FL7L |
| K4M563233G-FF7L | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | Samsung Semiconductor | K4M563233G-FL7L0 vs K4M563233G-FF7L |
| K4M563233G-FF7LT | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | Samsung Semiconductor | K4M563233G-FL7L0 vs K4M563233G-FF7LT |
| K4M563233G-HF7LT | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | Samsung Semiconductor | K4M563233G-FL7L0 vs K4M563233G-HF7LT |