Datasheets
K4S160822DT-F8 by: Samsung Semiconductor

Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44

Part Details for K4S160822DT-F8 by Samsung Semiconductor

Overview of K4S160822DT-F8 by Samsung Semiconductor

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Part Details for K4S160822DT-F8

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K4S160822DT-F8 Part Data Attributes

K4S160822DT-F8 Samsung Semiconductor
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K4S160822DT-F8 Samsung Semiconductor Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description TSOP2, TSOP44,.46,32
Pin Count 44
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode DUAL BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 125 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G44
JESD-609 Code e0
Length 18.41 mm
Memory Density 16777216 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 44
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP44,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 2048
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.11 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4S160822DT-F8

This table gives cross-reference parts and alternative options found for K4S160822DT-F8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S160822DT-F8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY57V168010DLTC-10S Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 SK Hynix Inc K4S160822DT-F8 vs HY57V168010DLTC-10S
HM5216805TT-B60 Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 Hitachi Ltd K4S160822DT-F8 vs HM5216805TT-B60
HY57V168010CLTC-8 Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 SK Hynix Inc K4S160822DT-F8 vs HY57V168010CLTC-8
HY57V168010DTC-8 Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 SK Hynix Inc K4S160822DT-F8 vs HY57V168010DTC-8
UPD4516821AG5-A80-9NF Synchronous DRAM, 2MX8, 6ns, MOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 NEC Electronics Group K4S160822DT-F8 vs UPD4516821AG5-A80-9NF
MB81F16822B-75FN Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 FUJITSU Semiconductor Limited K4S160822DT-F8 vs MB81F16822B-75FN
HY57V168010CTC-8 Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 SK Hynix Inc K4S160822DT-F8 vs HY57V168010CTC-8
MSM56V16800F-8ATS-K Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 OKI Electric Industry Co Ltd K4S160822DT-F8 vs MSM56V16800F-8ATS-K
UPD4516821AG5-A80-9NF Synchronous DRAM, 2MX8, 6ns, MOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 Elpida Memory Inc K4S160822DT-F8 vs UPD4516821AG5-A80-9NF
TMS626812B-10ADGE 2MX8 SYNCHRONOUS DRAM, 6ns, PDSO44, 0.400 INCH, PLASTIC, TSOP-44 Texas Instruments K4S160822DT-F8 vs TMS626812B-10ADGE
Part Number Description Manufacturer Compare
MB81117822E-125FN Synchronous DRAM, 2MX8, 45ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 FUJITSU Semiconductor Limited K4S160822DT-F8 vs MB81117822E-125FN
M5M4V16S30CTP-10 Synchronous DRAM, 2MX8, 8ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 Mitsubishi Electric K4S160822DT-F8 vs M5M4V16S30CTP-10
HY57V168010CTC-10P Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 SK Hynix Inc K4S160822DT-F8 vs HY57V168010CTC-10P
HY57V168010CTC-10 Synchronous DRAM, 2MX8, 8ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 SK Hynix Inc K4S160822DT-F8 vs HY57V168010CTC-10
M5M4S16S31CTP-7 Synchronous DRAM, 2MX8, 5ns, CMOS, PDSO44, 0.300 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 Mitsubishi Electric K4S160822DT-F8 vs M5M4S16S31CTP-7
MB81116822A-84FN 2MX8 SYNCHRONOUS DRAM, 8.5ns, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 FUJITSU Semiconductor Limited K4S160822DT-F8 vs MB81116822A-84FN
K4S160822DT-FH Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 Samsung Semiconductor K4S160822DT-F8 vs K4S160822DT-FH
MT48LC2M8S1RG-10TR Synchronous DRAM, 2MX8, CMOS, PDSO44, 0.400 INCH, PLASTIC, REVERSE, TSOP-44 Micron Technology Inc K4S160822DT-F8 vs MT48LC2M8S1RG-10TR
HYB39S16800CT-8 Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 Infineon Technologies AG K4S160822DT-F8 vs HYB39S16800CT-8
HY57V168010CTC-10S Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, TSOP2-44 SK Hynix Inc K4S160822DT-F8 vs HY57V168010CTC-10S

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