Part Details for K4J52324QH-HJ7A0 by Samsung Semiconductor
Overview of K4J52324QH-HJ7A0 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for K4J52324QH-HJ7A0
K4J52324QH-HJ7A0 CAD Models
K4J52324QH-HJ7A0 Part Data Attributes
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K4J52324QH-HJ7A0
Samsung Semiconductor
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Datasheet
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K4J52324QH-HJ7A0
Samsung Semiconductor
DDR DRAM, 16MX32, 0.18ns, CMOS, PBGA136, HALOGEN FREE AND ROHS COMPLIANT, FBGA-136
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA136,12X17,32 | |
| Pin Count | 136 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.18 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 1300 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B136 | |
| JESD-609 Code | e1 | |
| Length | 14 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | GDDR3 DRAM | |
| Memory Width | 32 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 136 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA136,12X17,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.109 A | |
| Supply Current-Max | 1.452 mA | |
| Supply Voltage-Max (Vsup) | 2.1 V | |
| Supply Voltage-Min (Vsup) | 2 V | |
| Supply Voltage-Nom (Vsup) | 2.05 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 10 mm |
Alternate Parts for K4J52324QH-HJ7A0
This table gives cross-reference parts and alternative options found for K4J52324QH-HJ7A0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4J52324QH-HJ7A0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4J52324QC-BC140 | DDR DRAM, 16MX32, 0.26ns, CMOS, PBGA136, ROHS COMPLIANT, FBGA-136 | Samsung Semiconductor | K4J52324QH-HJ7A0 vs K4J52324QC-BC140 |
| H5RS5223CFR-18C | DDR DRAM, 16MX32, CMOS, PBGA126, 10 X 14 MM, ROHS COMPLIANT, FBGA-136 | SK Hynix Inc | K4J52324QH-HJ7A0 vs H5RS5223CFR-18C |
| HYB18H512321BF-14 | Synchronous Graphics RAM, 16MX32, 0.25ns, CMOS, PBGA136, 10 X 14 MM, GREEN, PLASTIC, MO-207IDR-Z, TFBGA-136 | Qimonda AG | K4J52324QH-HJ7A0 vs HYB18H512321BF-14 |
| K4J52324QC-AC200 | DDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136, FBGA-136 | Samsung Semiconductor | K4J52324QH-HJ7A0 vs K4J52324QC-AC200 |
| HY5RS123235FP-11 | DDR DRAM, 16MX32, 0.25ns, CMOS, PBGA136, 12 X 14 MM, LEAD FREE, FBGA-136 | SK Hynix Inc | K4J52324QH-HJ7A0 vs HY5RS123235FP-11 |
| K4J52324QH-HC120 | DDR DRAM, 16MX32, 0.23ns, CMOS, PBGA136, HALOGEN FREE AND ROHS COMPLIANT, FBGA-136 | Samsung Semiconductor | K4J52324QH-HJ7A0 vs K4J52324QH-HC120 |
| HY5FS123235AFCP-06 | DDR DRAM, 16MX32, 0.14ns, CMOS, PBGA136, ROHS COMPLIANT, MO-207, FBGA-136 | SK Hynix Inc | K4J52324QH-HJ7A0 vs HY5FS123235AFCP-06 |
| K4J52324QC-BC160 | DDR DRAM, 16MX32, 0.29ns, CMOS, PBGA136, ROHS COMPLIANT, FBGA-136 | Samsung Semiconductor | K4J52324QH-HJ7A0 vs K4J52324QC-BC160 |
| H5RS5223CFR-N3C | DDR DRAM, 16MX32, CMOS, PBGA126, 10 X 14 MM, ROHS COMPLIANT, FBGA-136 | SK Hynix Inc | K4J52324QH-HJ7A0 vs H5RS5223CFR-N3C |
| HY5FS123235AFCP-07 | DDR DRAM, 16MX32, 0.16ns, CMOS, PBGA136, ROHS COMPLIANT, MO-207, FBGA-136 | SK Hynix Inc | K4J52324QH-HJ7A0 vs HY5FS123235AFCP-07 |