Memory
K4H560838E-TCA20
Samsung Semiconductor
Description: DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

Overview of K4H560838E-TCA20 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Computing and Data Storage

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Part Data Attributes for K4H560838E-TCA20 by Samsung Semiconductor

K4H560838E-TCA20
Samsung Semiconductor
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
TSOP2, TSSOP66,.46
Pin Count
66
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.75 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PDSO-G66
JESD-609 Code
e0
Length
22.22 mm
Memory Density
268435456 bit
Memory IC Type
DDR1 DRAM
Memory Width
8
Number of Functions
1
Number of Ports
1
Number of Terminals
66
Number of Words
33554432 words
Number of Words Code
32000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
32MX8
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSSOP66,.46
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
2,4,8
Standby Current-Max
0.003 A
Supply Current-Max
0.25 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Pitch
0.65 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. K4H560838E-TCA20
    Samsung Semiconductor
    DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
    VS

Alternate Parts for K4H560838E-TCA20

This table gives cross-reference parts and alternative options found for K4H560838E-TCA20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H560838E-TCA20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4H560838E-TCB0 DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H560838E-TCA20 vs K4H560838E-TCB0
K4H560838E-ULB0T DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H560838E-TCA20 vs K4H560838E-ULB0T
K4H560838E-UCA20 DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H560838E-TCA20 vs K4H560838E-UCA20
K4H560838E-TCA2 DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H560838E-TCA20 vs K4H560838E-TCA2
K4H560838E-TCA2T DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, Samsung Semiconductor K4H560838E-TCA20 vs K4H560838E-TCA2T
K4H560838E-TLA2 DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H560838E-TCA20 vs K4H560838E-TLA2
K4H560838E-ULB0 DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H560838E-TCA20 vs K4H560838E-ULB0
K4H560838F-TCB0 DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H560838E-TCA20 vs K4H560838F-TCB0
K4H560838F-UCB0 DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H560838E-TCA20 vs K4H560838F-UCB0
K4H560838E-UCA2 DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H560838E-TCA20 vs K4H560838E-UCA2
Part Number Description Manufacturer Compare
MT46V32M8TG-75ZIT:G DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H560838E-TCA20 vs MT46V32M8TG-75ZIT:G
K4C560838C-TCDA Synchronous DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, PLASTIC, TSOP2-66 Samsung Semiconductor K4H560838E-TCA20 vs K4C560838C-TCDA
MT46V32M8TG-75:G DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H560838E-TCA20 vs MT46V32M8TG-75:G
MT46V32M8TG-75ZLITH 32MX8 DDR DRAM, 0.75ns, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H560838E-TCA20 vs MT46V32M8TG-75ZLITH
V58C2256804SAI-7 DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H560838E-TCA20 vs V58C2256804SAI-7
MT46V32M8P-75Z DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H560838E-TCA20 vs MT46V32M8P-75Z
MT46V32M8FJ-75EL DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, 16 X 9 MM, PLASTIC, FBGA-60 Micron Technology Inc K4H560838E-TCA20 vs MT46V32M8FJ-75EL
MT46V32M8P-75LHIT DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H560838E-TCA20 vs MT46V32M8P-75LHIT
HY5DU56822DF-L DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, FBGA-60 SK Hynix Inc K4H560838E-TCA20 vs HY5DU56822DF-L
HY5DU56822CTP-H DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc K4H560838E-TCA20 vs HY5DU56822CTP-H

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